Chemical Vapor Deposition Growth of Few-Layer MoTe2 in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe2 Films von Empante, Thomas A, Zhou, Yao, Klee, Velveth, Nguyen, Ariana E, Lu, I-Hsi, Valentin, Michael D, Naghibi Alvillar, Sepedeh A, Preciado, Edwin, Berges, Adam J, Merida, Cindy S, Gomez, Michael, Bobek, Sarah, Isarraraz, Miguel, Reed, Evan J, Bartels, Ludwig

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Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition von Empante, Thomas A, Martinez, Aimee, Wurch, Michelle, Zhu, Yanbing, Geremew, Adane K, Yamaguchi, Koichi, Isarraraz, Miguel, Rumyantsev, Sergey, Reed, Evan J, Balandin, Alexander A, Bartels, Ludwig

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Metallic Transport in Chemical Vapor Deposition ZrTe3 Nanoribbons on a SiO2 Wafer Substrate von Jin, Jing, Wurch, Michelle, Baraghani, Saba, Coyle, Daniel J, Empante, Thomas A, Kargar, Fariborz, Balandin, Alexander A, Bartels, Ludwig

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Low Resistivity and High Breakdown Current Density of 10 nm Diameter van der Waals TaSe 3 Nanowires by Chemical Vapor Deposition von Empante, Thomas A, Martinez, Aimee, Wurch, Michelle, Zhu, Yanbing, Geremew, Adane K, Yamaguchi, Koichi, Isarraraz, Miguel, Rumyantsev, Sergey, Reed, Evan J, Balandin, Alexander A, Bartels, Ludwig

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High-Vacuum Particulate-Free Deposition of Wafer-Scale Mono‑, Bi‑, and Trilayer Molybdenum Disulfide with Superior Transport Properties von Almeida, Kortney, Wurch, Michelle, Geremew, Adane, Yamaguchi, Koichi, Empante, Thomas A, Valentin, Michael D, Gomez, Michael, Berges, Adam J, Stecklein, Gordon, Rumyantsev, Sergey, Martinez, Joseph, Balandin, Alexander A, Bartels, Ludwig

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Chemical Vapor Deposition Growth of Few-Layer MoTe 2 in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe 2 Films von Empante, Thomas A, Zhou, Yao, Klee, Velveth, Nguyen, Ariana E, Lu, I-Hsi, Valentin, Michael D, Naghibi Alvillar, Sepedeh A, Preciado, Edwin, Berges, Adam J, Merida, Cindy S, Gomez, Michael, Bobek, Sarah, Isarraraz, Miguel, Reed, Evan J, Bartels, Ludwig

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Metallic Transport in Chemical Vapor Deposition ZrTe 3 Nanoribbons on a SiO 2 Wafer Substrate von Jin, Jing, Wurch, Michelle, Baraghani, Saba, Coyle, Daniel J., Empante, Thomas A., Kargar, Fariborz, Balandin, Alexander A., Bartels, Ludwig

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Low Resistivity and High Breakdown Current Density of 10-nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition von Empante, Thomas A, Martinez, Aimee, Wurch, Michelle, Zhu, Yanbing, Geremew, Adane K, Yamaguchi, Koichi, Isarraraz, Miguel, Rumyantsev, Sergey, Reed, Evan J, Balandin, Alexander A, Bartels, Ludwig

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Microring Resonators Coupling Tunability by Heterogeneous 2D Material Integration von Maiti, Rishi, Hemnani, Rohit, Amin, Rubab, Ma, Zhizhen, Tahersima, Mohammad, Empante, Thomas A, Dalir, Hamed, Agarwal, Ritesh, Bartels, Ludwig, Sorger, Volker J

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Microring Resonators Coupling Tunability by Heterogeneous 2D Material Integration von Maiti, Rishi, Hemnani, Rohit, Amin, Rubab, Ma, Zhizhen, Tahersima, Mohammad, Empante, Thomas A, Dalir, Hamed, Agarwal, Ritesh, Bartels, Ludwig, Sorger, Volker J

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Large-scale arrays of single- and few-layer MoS2 nanomechanical resonators von Jia, Hao, Yang, Rui, Nguyen, Ariana E, Alvillar, Sahar Naghibi, Empante, Thomas, Bartels, Ludwig, Feng, Philip X.-L

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Selective MOSI deposition von EMPANTE, THOMAS ANTHONY, GELATOS, AVGERINOS V

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Methods for selective molybdenum deposition von EMPANTE, THOMAS, HU, YANG, GELATOS, AVGERINOS V

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Large-scale arrays of single- and few-layer MoS sub(2) nanomechanical resonators von Jia, Hao, Yang, Rui, Nguyen, Ariana E, Alvillar, Sahar Naghibi, Empante, Thomas, Bartels, Ludwig, Feng, Philip X-L

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Large-scale arrays of single- and few-layer MoS 2 nanomechanical resonators von Jia, Hao, Yang, Rui, Nguyen, Ariana E., Alvillar, Sahar Naghibi, Empante, Thomas, Bartels, Ludwig, Feng, Philip X.-L.

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Contact resistance reduction by integration of molybdenum with titanium von EMPANTE, THOMAS ANTHONY, CHING, CHI H, HU, YANG, BREIL, NICOLAS, THAREJA, GAURAV, YOU, SHI, LEE, JOUNG JOO, GELATOS, AVGERINOS V, RAMESH, PRANAV

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Dual silicide process using ruthenium silicide von EMPANTE, THOMAS ANTHONY, YUAN, ZHI-BO, YOON, BYUNG-HOON, WU, LIQI, LEE, JOUNG JOO, GELATOS, AVGERINOS V

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규화루테늄을 사용한 이중 실리사이드 프로세스 von YUAN ZHIBO, EMPANTE THOMAS ANTHONY, WU LIQI, LEE JOUNG JOO, YOON BYUNGHOON, GELATOS AVGERINOS V

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SELECTIVE MOSI DEPOSITION von EMPANTE, Thomas Anthony, GELATOS, Avgerinos V

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SELECTIVE MOSI DEPOSITION von Empante, Thomas Anthony, Gelatos, Avgerinos V

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