Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications von ASHLEY, T, BUCKLE, L, WILDING, P. J, CHAU, R, DATTA, S, EMENY, M. T, HAYES, D. G, HILTON, K. P, JEFFERIES, R, MARTIN, T, PHILLIPS, T. J, WALLIS, D. J

Volltext

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures von Leontiadou, M A, Litvinenko, K L, Gilbertson, A M, Pidgeon, C R, Branford, W R, Cohen, L F, Fearn, M, Ashley, T, Emeny, M T, Murdin, B N, Clowes, S K

Volltext

Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection von Gilbertson, A. M., Benstock, D., Fearn, M., Kormányos, A., Ladak, S., Emeny, M. T., Lambert, C. J., Ashley, T., Solin, S. A., Cohen, L. F.

Volltext

Giant enhanced g-factors in an InSb two-dimensional gas von Nedniyom, B., Nicholas, R. J., Emeny, M. T., Buckle, L., Gilbertson, A. M., Buckle, P. D., Ashley, T.

Volltext

Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 − xSb heterostructures von Pooley, O J, Gilbertson, A M, Buckle, P D, Hall, R S, Emeny, M T, Fearn, M, Halsall, M P, Cohen, L F, Ashley, T

Volltext

Electronic transport in modulation-doped InSb quantum well heterostructures von Orr, J. M. S., Gilbertson, A. M., Fearn, M., Croad, O. W., Storey, C. J., Buckle, L., Emeny, M. T., Buckle, P. D., Ashley, T.

Volltext

Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures von Pooley, O J, Gilbertson, A M, Buckle, P D, Hall, R S, Buckle, L, Emeny, M T, Fearn, M, Cohen, L F, Ashley, T

Volltext

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures von Orr, J M S, Buckle, P D, Fearn, M, Wilding, P J, Bartlett, C J, Emeny, M T, Buckle, L, Ashley, T

Volltext

Lateral n–i–p junctions formed in an InSb quantum well by bevel etching von Nash, G R, Nash, K J, Smith, S J, Bartlett, C J, Jefferson, J H, Buckle, L, Emeny, M T, Buckle, P D, Ashley, T

Volltext

Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system von CULLIS, A. G, PIDDUCK, A. J, EMENY, M. T

Volltext

Midinfrared GaInSb∕AlGaInSb quantum well laser diodes grown on GaAs von Nash, G. R., Smith, S. J., Coomber, S. D., Przeslak, S., Andreev, A., Carrington, P., Yin, M., Krier, A., Buckle, L., Emeny, M. T., Ashley, T.

Volltext

Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells von LAMBKIN, J. D, DUNSTAN, D. J, HOMEWOOD, K. P, HOWARD, L. K, EMENY, M. T

Volltext

Lateral n–i–p junction characterization using laser microscopy von Muscat, S, Nash, G R, Hall, R S, Smith, S J, Bartlett, C J, Nash, K J, Jefferson, J H, Buckle, L, Emeny, M T, Ashley, T

Volltext

InSb ∕ AlInSb quantum-well light-emitting diodes von Nash, G. R., Haigh, M. K., Hardaway, H. R., Buckle, L., Andreev, A. D., Gordon, N. T., Smith, S. J., Emeny, M. T., Ashley, T.

Volltext

Lateral light emitting n-i-p diodes in InSb∕AlxIn1−xSb quantum wells von Smith, S. J., Nash, G. R., Bartlett, C. J., Buckle, L., Emeny, M. T., Ashley, T.

Volltext

Photoluminescence from single InSb quantum wells von Smith, S. J., Nash, G. R., Fearn, M., Buckle, L., Emeny, M. T., Ashley, T.

Volltext

Misfit dislocation sources at surface ripple Troughs in continuous heteroepitaxial layers von Cullis, AG, Pidduck, AJ, Emeny, MT

Volltext

Mid-infrared AlxIn1−xSb light-emitting diodes von Haigh, M. K., Nash, G. R., Smith, S. J., Buckle, L., Emeny, M. T., Ashley, T.

Volltext

Acoustic Charge Transport In Lateral n-i-p InSb/AlxIn1-xSb Quantum Well Diodes von Smith, S J, Nash, G R, Lewis, M F, Bartlett, C J, Buckle, L, Emeny, M T, Ashley, T

Volltext

Mid-infrared AlxIn1-xSb components for gas sensing von Haigh, M K, Nash, G R, Terakado, T, Bando, N, Yamagishi, Y, Smith, S J, Buckle, L, Emeny, M T, Ashley, T

Volltext