Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells von Ruffenach, S., Krishtopenko, S. S., Bovkun, L. S., Ikonnikov, A. V., Marcinkiewicz, M., Consejo, C., Potemski, M., Piot, B., Orlita, M., Semyagin, B. R., Putyato, M. A., Emel’yanov, E. A., Preobrazhenskii, V. V., Knap, W., Gonzalez-Posada, F., Boissier, G., Tournié, E., Teppe, F., Gavrilenko, V. I.

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Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires von Kalachev, I. V., Milekhin, I. A., Emel’yanov, E. A., Preobrazhenskii, V. V., Tumashev, V. S., Milekhin, A. G., Latyshev, A. V.

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Molecular Beam Epitaxy of InAsSb Solid Solution: Effect of Growth Rate on Composition of Epitaxial Layers von Emel’yanov, E. A., Petrushkov, M. O., Putyato, M. A., Loshkarev, I. D., Vasev, A. V., Semyagin, B. R., Preobrazhenskii, V. V.

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InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers von Emel'yanov, E A, Vasev, A V, Semyagin, B R, Vasilenko, A P, Komanov, A A, Gutakovskii, A K, Putyato, M A, Preobrazhenskii, V V

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy von Abramkin, D. S., Petrushkov, M. O., Emelyanov, E. A., Nenashev, A. V., Yesin, M. Yu, Vasev, A. V., Putyato, M. A., Bogomolov, D. B., Gutakovskiy, A. K., Preobrazhenskiy, V. V.

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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth von Nastovjak, A. G., Shwartz, N. L., Emelyanov, E. A., Petrushkov, M. O., Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V.

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A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure von Putyato, M. A., Valisheva, N. A., Petrushkov, M. O., Preobrazhenskii, V. V., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Vasev, A. V., Skachkov, A. F., Yurko, G. I., Nesterenko, I. I.

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Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers von Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Yu, Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., Shamirzaev, T. S.

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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates von Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K., Shamirzaev, T. S.

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Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source von Petrushkov, M. O., Putyato, M. A., Chistokhin, I. B., Semyagin, B. R., Emel’yanov, E. A., Esin, M. Yu, Gavrilova, T. A., Vasev, A. V., Preobrazhenskii, V. V.

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Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates von Petrushkov, M O, Putyato, M A, Gutakovsky, A K, Preobrazhenskii, V V, Loshkarev, I D, Emelyanov, E A, Semyagin, B R, Vasev, A V

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Distribution law evaluation for demand service time in information system with multiple access to the data link von Abramov, G. V., Emel’yanov, A. E., Kolbaya, K. Ch

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Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy von Emel’yanov, E. A., Feklin, D. F., Vasev, A. V., Putyato, M. A., Semyagin, B. R., Vasilenko, A. P., Pchelyakov, O. P., Preobrazhenskii, V. V.

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Improving the management quality of the process control in the food and agricultural industries von Bityukov, V K, Emelyanov, A E

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Application of computer simulation models in the study of the impact of data buffering on the quality of control in network systems von Abramov, G V, Avcinov, I A, Emelyanov, A E, Sukhanova, N V

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Operation Results of the Veksler and Baldin Laboratory of High Energy Physics Cryogenic Complex: Booster–Nuclotron Session Run von Agapov, N. N., Bulakh, A. P., Emelyanov, A. E., Konstantinov, A. V., Kunyaev, M. S., Mitrofanova, Iu. A., Smirnov, A. E., Shvidkiy, D. S.

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Fullerene production management system used for creation of hydrated solutions von Gavrilov, A N, Sukhanova, N V, Emelyanov, A E, Ivanov, A V

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Proximity-induced superconductivity within the InAs/GaSb edge conducting state von Kononov, A., Kostarev, V. A., Semyagin, B. R., Preobrazhenskii, V. V., Putyato, M. A., Emelyanov, E. A., Deviatov, E. V.

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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates von Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Yu, Komkov, O. S., Firsov, D. D., Preobrazhenskii, V. V.

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Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region von Utochkin, V. V., Fadeev, M. A., Krishtopenko, S. S., Rumyantsev, V. V., Aleshkin, V. Ya, Dubinov, A. A., Morozov, S. V., Semyagin, B. R., Putyato, M. A., Emelyanov, E. A., Preobrazhenskii, V. V., Gavrilenko, V. I.

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