Silicon nanocrystal-based photonic crystal slabs with broadband and efficient directional light emission von Ondič, L., Varga, M., Pelant, I., Valenta, J., Kromka, A., Elliman, R. G.

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Amorphization and graphitization of single-crystal diamond — A transmission electron microscopy study von Hickey, D.P., Jones, K.S., Elliman, R.G.

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Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries von Rudawski, N.G., Yates, B.R., Holzworth, M.R., Jones, K.S., Elliman, R.G., Volinsky, A.A.

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Graphene synthesis by C implantation into Cu foils von Lee, Jae Sung, Jang, Chan Wook, Kim, Jong Min, Shin, Dong Hee, Kim, Sung, Choi, Suk-Ho, Belay, K., Elliman, R.G.

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Insights for void formation in ion-implanted Ge von Darby, B.L., Yates, B.R., Rudawski, N.G., Jones, K.S., Kontos, A., Elliman, R.G.

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Volatile CuOH as a precursor for the growth of CuO nanowires von Shalav, A., Elliman, R.G.

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Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field von Mortemousque, P A, Rosenius, S, Pica, G, Franke, D P, Sekiguchi, T, Truong, A, Vlasenko, M P, Vlasenko, L S, Brandt, M S, Elliman, R G, Itoh, K M

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Role of nucleation sites on the formation of nanoporous Ge von Yates, B. R., Darby, B. L., Elliman, R. G., Jones, K. S.

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Advances in ion beam modification of semiconductors von Elliman, R.G., Williams, J.S.

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Depth profiling of ion-implanted samples by high-energy electron scattering von Trombini, H., Vos, M., Elliman, R. G., Grande, P. L.

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Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields von Mortemousque, P. A., Sekiguchi, T., Culan, C., Vlasenko, M. P., Elliman, R. G., Vlasenko, L. S., Itoh, K. M.

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The effect of annealing environment on the luminescence of silicon nanocrystals in silica von Wilkinson, A. R., Elliman, R. G.

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Effect of hydrogen on the photoluminescence of Si nanocrystals embedded in a SiO2 matrix von Cheylan, S., Elliman, R. G.

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The structure and electronic properties of tetrahedrally bonded hydrogenated amorphous carbon von Salek, A. G., Le, P. Y., Partridge, J. G., Raeber, T. J., Haberl, B., Boehler, R., Murdoch, B. J., Bradby, J. E., Ratcliff, T., Elliman, R. G., McKenzie, D. R., McCulloch, D. G.

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Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes von Rudawski, N. G., Darby, B. L., Yates, B. R., Jones, K. S., Elliman, R. G., Volinsky, A. A.

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Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen von Wilkinson, A. R., Elliman, R. G.

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2D Weyl‐Semimetal States Achieved by a Thickness‐Dependent Crossover and Topological Phase Transition in Bi0.96Sb0.04 Thin Films von Jang, Chan Wook, Salawu, Yusuff Adeyemi, Kim, Jin Hee, Nguyen, Van Quang, Kim, Min Seop, Lee, Sang‐Eon, Son, Hyebin, Kim, Heon‐Jung, Rhyee, Jong‐Soo, Hoa, Vu Thi, Cho, Sunglae, Lee, Jong Seok, Jung, Myung‐Hwa, Shon, Won Hyuk, Jeong, Tae Jin, Kim, Sung, Yum, Han‐Yup, Kim, Jung Ho, Wang, Xiaolin, Elliman, R. G., Park, Sang J., Kim, Junseok, Jin, Hyungyu, Choi, Suk‐Ho

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Effect of stopping-layer-assisted boron-ion implantation on the electrical properties of graphene: Interplay between strain and charge doping von Jang, Chan Wook, Kim, Ju Hwan, Lee, Dae Hun, Shin, Dong Hee, Kim, Sung, Choi, Suk-Ho, Hwang, Euyheon, Elliman, R.G.

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Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2 von Cheylan, S., Elliman, R. G.

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Optical gain in different silicon nanocrystal systems von Fauchet, P.M., Ruan, J., Chen, H., Pavesi, L., Dal Negro, L., Cazzaneli, M., Elliman, R.G., Smith, N., Samoc, M., Luther-Davies, B.

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