SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS von Gaul, Andrew, Mochizuki, Shogo, Miller, Eric, Greene, Andrew M, Newhart, Ronald, Xie, Ruilong, Emans, Susan Ng, Ellahi, Choudhury Mahboob, Durfee, Curtis S, Frougier, Julien, Loubet, Nicolas Jean, Chou, Anthony I

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