Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress von Pavesi, M., Manfredi, M., Salviati, G., Armani, N., Rossi, F., Meneghesso, G., Levada, S., Zanoni, E., Du, S., Eliashevich, I.

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Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs von Tran, C.A, Karlicek, R.F, Schurman, M, Osinsky, A, Merai, V, Li, Y, Eliashevich, I, Brown, M.G, Nering, J, Ferguson, I, Stall, R

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Failure Modes and Mechanisms of DC-Aged GaN LEDs von Meneghesso, G., Levada, S., Zanoni, E., Podda, S., Mura, G., Vanzi, M., Cavallini, A., Castaldini, A., Du, S., Eliashevich, I.

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Photon Recycling White Light Emitting Diode Based on InGaN Multiple Quantum Well Heterostructure von Nikolaev, V.V., Portnoi, M.E., Eliashevich, I.

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Optimized structure for InGaAsP/GaAs 808 nm high power lasers von Yi, H. J., Diaz, J., Wang, L. J., Eliashevich, I., Kim, S., Williams, R., Erdtmann, M., He, X., Kolev, E., Razeghi, M.

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Reliability of visible GaN LEDs in plastic package von Meneghesso, G., Levada, S., Zanoni, E., Scamarcio, G., Mura, G., Podda, S., Vanzi, M., Du, S., Eliashevich, I.

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High power aluminium-free InGaAsP/GaAs pumping diode lasers von Razeghi, M., Eliashevich, I., Diaz, J., Yi, H.-J., Kim, S., Erdtmann, M., Wu, D., Wang, L.J.

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AlGaN/GaN HEMT on Diamond Technology Demonstration von Jessen, G.H., Gillespie, J.K., Via, G.D., Crespo, A., Langley, D., Wasserbauer, J., Faili, F., Francis, D., Babic, D., Ejeckam, F., Guo, S., Eliashevich, I.

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InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition von Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.

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Progress in GaN Performances and Reliability von Saunier, P., Lee, C., Balistreri, A., Dumka, D., Jimenez, J., Tserng, H.Q., Kao, M.Y., Chao, P.C., Chu, K., Souzis, A., Eliashevich, I., Guo, S., del Alamo, J., Joh, J., Shur, M.

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Degradation mechanisms of GaN-based LEDs after accelerated DC current aging von Meneghesso, G., Levada, S., Pierobon, R., Rampazzo, F., Zanoni, E., Cavallini, A., Castaldini, A., Scamarcio, G., Du, S., Eliashevich, I.

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Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors von Eliashevich, I., Diaz, J., Yi, H., Wang, L., Razeghi, M.

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Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes von Diaz, J., Eliashevich, I., Yi, H., He, X., Stanton, M., Erdtmann, M., Wang, L., Razeghi, M.

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High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics von Diaz, J., Eliashevich, I., He, X., Yi, H., Wang, L., Kolev, E., Garbuzov, D., Razeghi, M.

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Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness von Yi, H. J., Diaz, J., Eliashevich, I., Lukas, G., Kim, S., Wu, D., Erdthmann, M., Jelen, C., Slivken, S., Wang, L. J., Razeghi, M.

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Temperature dependence of threshold current density J th and differential efficiency η d of high-power InGaAsP/GaAs (λ=0.8 μm) lasers von Yi, H. J., Diaz, J., Eliashevich, I., Stanton, M., Erdtmann, M., He, X., Wang, L. J., Razeghi, M.

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InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition von Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.

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InGaP/InGaAsP/GaAs 0.808 mum separate confinement laser diodes grown by metalorganic chemical vapor deposition von Diaz, J, Eliashevich, I, Mobarhan, K, Kolev, E, Wang, L J, Garbuzov, D Z, Razeghi, M

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Mass Production of High Brightness Blue and Green LEDs by MOCVD von Tran, C. A., Karlicek Jr, R. F., Brown, M. G., Elliashevich, I., Gurary, A., Schurman, M., Stall, R.

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Photon recycling white light emitting diode based on InGaN multiple quantum well heterostructure von Nikolaev, V. V, Portnoi, M. E, Eliashevich, I

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