Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method von Afifah Maheran, A H, Firhat, E N, Salehuddin, F, Mohd Zain, A S, Ahmad, I, Noor Faizah, Z A, Menon, P S, Elgomati, H A, Roslan, Ameer F

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Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor von Afifah Maheran, A H, Menon, P S, Ahmad, I, Shaari, S, Elgomati, H A, Salehuddin, F

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Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current von Elgomati, H. A.

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Modelling of Process Parameters for 32nm PMOS Transistor Using Taguchi Method von Elgomati, H. A., Majlis, B. Y., Hamid, A. M. A., Susthitha, P. M., Ahmad, I.

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Scaling down of the 32 nm to 22 nm gate length NMOS transistor von Afifah Maheran, A. H., Menon, P. S., Ahmad, I., Elgomati, H. A., Majlis, B. Y., Salehuddin, F.

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Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET von Salehuddin, F., Ahmad, I., Hamid, F. A., Zaharim, A., Elgomati, H. A., Majlis, B. Y.

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Optimizing 35nm NMOS devices VTH and ILEAK by controlling active area and halo implantation dosage von Elgomati, H. A., Majlis, B. Y., Salehuddin, F., Ahmad, I., Zaharim, A., Hamid, F. A.

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Cobalt silicide and titanium silicide effects on nano devices von Elgomati, H. A., Majlis, B. Y., Salehuddin, F., Ahmad, I., Zaharim, A., Hamid, F. A.

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Characterization of fabrication process noises for 32nm NMOS devices von Elgomati, H A, Majlis, B Y, Ahmad, I, Ziad, T

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Optimization of process parameter variation in 45nm p-channel MOSFET using L18 orthogonal array von Salehuddin, F., Ahmad, I., Hamid, F. A., Zaharim, A., Hamid, A. M. A., Menon, P. S., Elgomati, H. A., Majlis, B. Y., Apte, P. R.

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A miniature, all-electrostatic, field emission electron column for surface analytical microscopy von Roberts, R H, Gomati, M M El, Kudjoe, J, Barkshire, I R, Bean, S J, Prutton, M

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Quantifying data from Auger spectra and images von Walker, C. G. H., Peacock, D. C., Prutton, M., El Gomati, M. M.

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The use of metal/semiconductor structures to develop MULSAM analytical techniques von Prutton, M., Barkshire, I. R., El Gomati, M. M., Greenwood, J. C., Kenny, P. G., Roberts, R. H.

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The role of zirconium and sulphur in the adherence of oxides on superalloys von Walker, C.G.H., El Gomati, M.M.

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Contrast reversal in SAM mapping due to changes in the substrate atomic number von El Gomati, M.M., Walker, C.G.H.

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Image correlation: Application to correction of beam current fluctuations in quantitative surface microscopy von Barkshire, I. R., Greenwood, J. C., Kenny, P. G., Prutton, M., Roberts, R. H., El Gomati, M. M.

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The surface segregation of Zr in a superalloy (NiCrAlZr) von El Gomati, M.M., Walker, C.G.H., Peacock, D.C., Prutton, M., Bishop, H.E., Hawes, R.M.H., Smialek, J.

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