Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics von Babcock, J.A., Balster, S.G., Pinto, A., Dirnecker, C., Steinmann, P., Jumpertz, R., El-Kareh, B.

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An investigation of low-frequency noise in complementary SiGe HBTs von Enhai Zhao, Krithivasan, R., Sutton, A.K., Zhenrong Jin, Cressler, J.D., El-Kareh, B., Balster, S., Yasuda, H.

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The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI von Bellini, M., Bongim Jun, Sutton, A.K., Appaswamy, A.C., Peng Cheng, Cressler, J.D., Marshall, P.W., Schrimpf, R.D., Fleetwood, D.M., El-Kareh, B., Balster, S., Steinmann, P., Yasuda, H.

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The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs von Enhai Zhao, Sutton, A.K., Haugerud, B.M., Cressler, J.D., Marshall, P.W., Reed, R.A., El-Kareh, B., Balster, S., Yasuda, H.

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Corrections to "An Investigation of Low-Frequency Noise in Complementary SiGe HBTs" von Zhao, E., Krithivasan, R., Sutton, A.K., Jin, Z., Cressler, J.D., El-Kareh, B., Balster, S., Yasuda, H.

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A fundamental performance limit of optimized 3.3-V sub-quarter-micrometer fully overlapped LDD MOSFET's von Bryant, A., El-Kareh, B., Furukawa, T., Noble, W.P., Nowak, E.J., Schwittek, W., Tonti, W.

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An experimental 1-Mbit CMOS SRAM with configurable organization and operation von Williams, T., Beilstein, K., El-Kareh, B., Flaker, R., Gravenites, G., Lipa, R., Lee, H.-S., Maslack, J., Pessetto, J., Pokorny, W.F., Roberge, M., Zeller, H.

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Device design methodology and reliability strategy for deep sub-micron technology [DRAMs] von Divakaruni, R., El-Kareh, B., Tonti, W.R.

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Modeling of broadband noise in complementary (npn + pnp) SiGe HBTs von Banerjee, B., Venkataraman, S., Enhai Zhao, Chang-Ho Lee, Cressler, J.D., Laskar, J., El-Kareh, B., Balster, S., Yasuda, H.

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An 18K bipolar dynamic random access memory von Penoyer, R.F., El-Kareh, B., Houghton, R.J., Lane, P.K., Selfridge, T.A.

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Analysis of a range of symmetrical three-aperture electrostatic lenses von El-Kareh, A.B., Sturans, M.A.

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The evolution of DRAM cell technology von El-Kareh, B, Bronner, G.B, Schuster, S.E

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Erratum: High Speed Oscilloscope with Electron Optical Magnification Using Four‐Pole Lenses von El‐Kareh, Auguste B.

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High Speed Oscilloscope with Electron Optical Magnification Using Four‐Pole Lenses von El‐Kareh, Auguste B.

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Contribution to the general analysis of field emission von El-Kareh, A. B., Wolfe, J. C., Wolfe, J. E.

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Die Abklingdauer der Fluoreszenz von Naphthalin-Kristallen von El-Kareh, T. B., Wolf, H. C.

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Development of a high bandwidth merged logic/DRAM multimedia chip von Luk, W.K., Katayama, Y., Hwang, W., Wordeman, M., Kirihata, T., Satoh, A., Munetoh, S., Wong, H., El-Kareh, B., Xiao, P., Joshi, R.

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Ion implantation issues in microelectronic device manufacturing von Bala, K., Hoepfner, J., El-Kareh, B.

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Low temperature CMOS-a brief review von Clark, W.F., El-Kareh, B., Pires, R.G., Titcomb, S.L., Anderson, R.L.

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Silicon on insulator-an emerging high-leverage technology von El-Kareh, B., Bomy Chen, Stanley, T.

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