Cathodoluminescence and depth profiling studies of unintentionally doped GaN films grown by MOVPE von Tounsi, Nabil, Guermazi, Hajer, Guermazi, Samir, Jani, Belgacem El

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Luminescence dynamics in AlGaN with AlN content of 20 von Soltani, Sonia, Bouzidi, Mouhamed, Touré, Alhousseynou, Gerhard, Marina, Halidou, Ibrahim, Chine, Zied, El Jani, Belgacem, Shakfa, Mohammad Khaled

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Effect of Si doping on optical and thermal properties of MOVPE GaN thin layers von Saadallah, Faycel, Benzarti, Zohra, Halidou, Ibrahim, Yacoubi, Noureddine, El Jani, Belgacem

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Cathodoluminescence and depth profilingstudies of unintentionally doped GaN films grown by MOVPE von Tounsi, Nabil, Guermazi, Hajer, Guermazi, Samir, Jani, Belgacem El

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Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy von Ben Sedrine, Nebiha, Moussa, Imed, Fitouri, Hedi, Rebey, Ahmed, El Jani, Belgacem, Chtourou, Radhouane

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Spectroscopic ellipsometry study of GaAs 1 − x Bi x material grownon GaAs substrate by atmospheric pressure metal-organicvapor-phase epitaxy von Ben Sedrine, Nebiha, Moussa, Imed, Fitouri, Hedi, Rebey, Ahmed, El Jani, Belgacem, Chtourou, Radhouane

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Optical and theoretical investigations of V2+ ion in GaN von Souissi, Hajer, Souissi, Mnawer, Dammak, Mohamed, Chine, Zied, Kammoun, Souha, El Jani, Belgacem

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Optical and theoretical investigations of V 2+ ion in GaN von Souissi, Hajer, Souissi, Mnawer, Dammak, Mohamed, Chine, Zied, Kammoun, Souha, El Jani, Belgacem

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Silicon effect on GaN surface morphology von Benzarti, Z, Halidou, I, Tottereau, O, Boufaden, T, El Jani, B

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In situ etching of GaAs using AsCl 3 in MOVPE. I von El Jani, Belgacem, Grenet, Jean-Claude, Guittard, Maurice, Senouci, Bachir

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In situ etching of GaAs using AsCl3 in MOVPE. I von El Jani, Belgacem, Grenet, Jean-Claude, Guittard, Maurice, Senouci, Bachir

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