Influence of varying molar concentration on the properties of electrochemically-deposited zirconium-doped ZnSe thin films von Ikhioya, Imosobomeh L., Nkele, Agnes C., Okoli, D.N., Ekpunobi, A.J., Ahmed, Ishaq

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Reformulated tight binding calculation for band discontinuity at CdTe/Hg x Cd 1− x Te heterointerfaces and their type I–type III transitions von Ekpunobi, A.J.

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A model of the response of GMR of metallic multilayers to external magnetic field von Uba, J.I., Ekpunobi, A.J., Ekwo, P.I.

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Reformulated tight binding calculation for band discontinuity at CdTe/HgxCd1−xTe heterointerfaces and their type I–type III transitions von Ekpunobi, A.J.

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Calculation of band offset in chalcopyrite system von Ekpunobi, A.J

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Curvature of band overlap in InAs/GaSb Type II superlattices von Ekpunobi, A.J.

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Control of band discontinuity at III–V semiconductor interface by Si intralayers von Ekpunobi, A.J

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Band offsets in heterostructures by spin splittings von Ekpunobi, A.J.

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Influence of interfacial reactivity on band offsets in ZnSe/GaAs superlattices von Ekpunobi, A.J.

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Reformulation of the tight-binding theory of band offset at semiconductor heterojunction von Ekpunobi, A.J., Okeke, C.E., Animalu, A.O.E.

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Theory of valence and conduction band offsets in Si/Si 1 − yCy heterostructures von Ekpunobi, A.J., Animalu, A.O.E.

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Band offsets and properties ofSi1 − xGex/Si material systems von Ekpunobi, A.J., Animalu, A.O.E.

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Band offsets and properties of AlGaAs/GaAs and AlGaN/GaN material systems von Ekpunobi, A.J, Animalu, A.O.E

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