Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors von Shriki, A., Winter, R., Calahorra, Y., Kauffmann, Y., Ankonina, G., Eizenberg, M., Ritter, D.

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Degradation characteristics of metal/Al2O3/n-InGaAs capacitors von Palumbo, F., Eizenberg, M.

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Intrinsic electron traps in atomic-layer deposited HfO2 insulators von Cerbu, F., Madia, O., Andreev, D. V., Fadida, S., Eizenberg, M., Breuil, L., Lisoni, J. G., Kittl, J. A., Strand, J., Shluger, A. L., Afanas'ev, V. V., Houssa, M., Stesmans, A.

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Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study von Pazos, S. M., Boyeras Baldomá, S., Aguirre, F. L., Krylov, I., Eizenberg, M., Palumbo, F.

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Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests von FISHER, I, EIZENBERG, M

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The effect of surface roughness on the resistivity increase in nanometric dimensions von Marom, H., Eizenberg, M.

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Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks von Palumbo, F., Krylov, I., Eizenberg, M.

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Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks von Palumbo, F., Shekhter, P., Cohen Weinfeld, K., Eizenberg, M.

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Non-life threatening disorders (NLTDs): attitudes toward Autistic Spectrum Disorders (ASDs) among students of allied health professions von Simonstein, F, Mashiach-Eizenberg, M

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Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors von Palumbo, F., Winter, R., Tang, K., McIntyre, P. C., Eizenberg, M.

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Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks von Palumbo, F., Winter, R., Krylov, I., Eizenberg, M.

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Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3 von Shekhter, P., Schwendt, D., Amouyal, Y., Wietler, T. F., Osten, H. J., Eizenberg, M.

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Band offsets determination and interfacial chemical properties of the Al2O3/GaSb system von Geppert, I., Eizenberg, M., Ali, A., Datta, S.

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The asymmetric band structure and electrical behavior of the GdScO3/GaN system von Iacopetti, S., Shekhter, P., Winter, R., Tromm, T. C. U., Schubert, J., Eizenberg, M.

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Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing von Winter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M.

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The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack von Winter, R, Krylov, I, Ahn, J, McIntyre, P C, Eizenberg, M

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The contribution of grain boundary scattering versus surface scattering to the resistivity of thin polycrystalline films von Marom, H., Ritterband, M., Eizenberg, M.

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Structures of ultra-thin atomic-layer-deposited TaNx films von Wu, Y. Y., Kohn, A., Eizenberg, M.

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The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric von Shekhter, P., Chaudhuri, A. R., Laha, A., Yehezkel, S., Shriki, A., Osten, H. J., Eizenberg, M.

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Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs von Palumbo, F., Shekhter, P., Eizenberg, M.

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