GaN avalanche photodiodes von Carrano, J. C., Lambert, D. J. H., Eiting, C. J., Collins, C. J., Li, T., Wang, S., Yang, B., Beck, A. L., Dupuis, R. D., Campbell, J. C.

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Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN von Carrano, J. C., Li, T., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

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THE DARK ENERGY CAMERA von Flaugher, B., Diehl, H. T., Honscheid, K., Abbott, T. M. C., Angstadt, R., Annis, J. T., Antonik, M., Ballester, O., Beaufore, L., Bernstein, G. M., Bigelow, B., Bonati, M., Boprie, D., Brooks, D., Buckley-Geer, E. J., Campa, J., Cardiel-Sas, L., Castander, F. J., Castilla, J., Cela-Ruiz, J. M., Chi, E., Cooper, C., da Costa, L. N., Dede, E., Derylo, G., DePoy, D. L., Doel, P., Drlica-Wagner, A., Eiting, J., Elliott, A. E., Emes, J., Estrada, J., Fausti Neto, A., Finley, D. A., Flores, R., Frieman, J., Gladders, M. D., Gutierrez, G. R., Hao, J., Holland, S. E., Holm, S., Huffman, D., Jackson, C., James, D. J., Jonas, M., Karcher, A., Karliner, I., Kent, S., Kessler, R., Kozlovsky, M., Kron, R. G., Kuehn, K., Lahav, O., Lathrop, A., Lee, J., Levi, M. E., Lewis, P., Li, T. S., Mandrichenko, I., Marshall, J. L., Martinez, G., Merritt, K. W., Miquel, R., Muñoz, F., Neilsen, E. H., Nichol, R. C., Nord, B., Olsen, J., Palaio, N., Peoples, J., Plazas, A. A., Reil, K., Rheault, J.-P., Roe, N. A., Rogers, H., Roodman, A., Sanchez, E., Scarpine, V., Schmitt, R., Schubnell, M., Schultz, K., Scott, L., Serrano, S., Smith, R. C., Soares-Santos, M., Stefanik, A., Stuermer, W., Suchyta, E., Sypniewski, A., Tarle, G., Thaler, J., Tighe, R., Tucker, D., Walker, A. R., Wang, G., Watson, M., Weaverdyck, C., Wester, W., Woods, R., Yanny, B.

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Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition von Liliental-Weber, Z., Benamara, M., Swider, W., Washburn, J., Grzegory, I., Porowski, S., Lambert, D. J. H., Eiting, C. J., Dupuis, R. D.

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Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition von Park, J., Grudowski, P. A., Eiting, C. J., Dupuis, R. D.

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Demonstration of a radiation resistant, high efficiency SiC betavoltaic von Eiting, C. J., Krishnamoorthy, V., Rodgers, S., George, T., Robertson, J. David, Brockman, John

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Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors von Carrano, J. C., Li, T., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

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Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers von Carrano, J. C., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

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Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN von Carrano, J. C., Li, T., Brown, D. L., Grudowski, P. A., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

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Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition von Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Wong, M. M., Dupuis, R. D., Liliental-Weber, Z., Benamara, M.

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Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure von Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T.-G., Dupuis, R. D.

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Very high-speed ultraviolet photodetectors fabricated on GaN von Carrano, J. C., Li, T., Eiting, C. J., Dupuis, R. D., Campbell, J. C.

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Influence of Dopants on Defect Formation in GaN von Liliental-Weber, Z., Jasinski, J., Benamara, M., Grzegory, I., Porowski, S., Lampert, D.J.H., Eiting, C.J., Dupuis, R.D.

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The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition von Grudowski, P. A., Holmes, A. L., Eiting, C. J., Dupuis, R. D.

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Activation studies of low-dose Si implants in gallium nitride von Eiting, C. J., Grudowski, P. A., Dupuis, R. D., Hsia, H., Tang, Z., Becher, D., Kuo, H., Stillman, G. E., Feng, M.

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Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition von Kwon, Ho Ki, Eiting, C. J., Lambert, D. J. H., Shelton, B. S., Wong, M. M., Zhu, T. G., Dupuis, R. D.

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Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition von Grudowski, P. A., Eiting, C. J., Park, J., Shelton, B. S., Lambert, D. J. H., Dupuis, R. D.

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AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition von Shelton, B S, Huang, J J, Lambert, D J H, Zhu, T G, Wong, M M, Eiting, C J, Kwon, H K, Feng, M, Dupuis, R D

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THE DARK ENERGY CAMERA von Flaugher, B., Diehl, H. T., Honscheid, K., Abbott, T. M. C., Alvarez, O., Angstadt, R., Annis, J. T., Antonik, M., Ballester, O., Beaufore, L., Bernstein, G. M., Bernstein, R. A., Bigelow, B., Bonati, M., Boprie, D., Campa, J., Cardiel-Sas, L., Cease, H., Cela-Ruiz, J. M., Chappa, S., Chi, E., Cooper, C., da Costa, L. N., Dede, E., Derylo, G., DePoy, D. L., de Vicente, J., Doel, P., Drlica-Wagner, A., Eiting, J., Elliott, A. E., Emes, J., Fausti Neto, A., Finley, D. A., Flores, R., Frieman, J., Gerdes, D., Gladders, M. D., Gregory, B., Gutierrez, G. R., Hao, J., Holland, S. E., Holm, S., Huffman, D., James, D. J., Jonas, M., Karliner, I., Kozlovsky, M., Kron, R. G., Kubik, D., Kuehn, K., Kuhlmann, S., Kuk, K., Lahav, O., Lee, J., Levi, M. E., Lewis, P., Li, T. S., Mandrichenko, I., Marshall, J. L., Martinez, G., Merritt, K. W., Neilsen, E. H., Nichol, R. C., Nord, B., Ogando, R., Olsen, J., Patton, K., Peoples, J., Plazas, A. A., Rauch, J., Reil, K., Rheault, J. -P., Roe, N. A., Rogers, H., Roodman, A., Sanchez, E., Scarpine, V., Schindler, R. H., Schmidt, R., Schmitt, R., Schubnell, M., Schultz, K., Schurter, P., Scott, L., Serrano, S., Shaw, T. M., Smith, R. C., Stefanik, A., Stuermer, W., Sypniewski, A., Tarle, G., Thaler, J., Tighe, R., Walker, A. R., Wang, G., Watson, M., Wester, W., Woods, R., Yanny, B.

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Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN von Shiojima, Kenji, McInturff, David T., Woodall, Jerry M., Grudowski, Paul A., Eiting, Christopher J., Dupuis, Russ D.

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