Epitaxial oxide thin films on Si(001) von Yu, Z., Ramdani, J., Curless, J. A., Overgaard, C. D., Finder, J. M., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Kaushik, V. S.

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Study of Microstructure in SrTiO3/Si by High-resolution Transmission Electron Microscopy von Yang, G. Y., Finder, J. M., Wang, J., Wang, Z. L., Yu, Z., Ramdani, J., Droopad, R., Eisenbeiser, K. W., Ramesh, R.

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Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy von Yu, Z., Ramdani, J., Curless, J. A., Finder, J. M., Overgaard, C. D., Droopad, R., Eisenbeiser, K. W., Hallmark, J. A., Ooms, W. J., Conner, J. R., Kaushik, V. S.

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Breakdown voltage improvement in strained InGaAlAs/GaAs FETs von Eisenbeiser, K.W., East, J.R., Singh, J., Li, W., Haddad, G.I.

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Theoretical analysis of the breakdown voltage in pseudomorphic HFETs von Eisenbeiser, K.W., East, J.R., Haddad, G.I.

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High breakdown voltage, sub-micron, strained InGaAlAs/GaAs FET's von Eisenbeiser, K.W., East, J.R., Haddad, G.I., Brock, T.

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Study of Microstructure in SrTiO 3 /Si by High-resolution Transmission Electron Microscopy von Yang, G. Y., Finder, J. M., Wang, J., Wang, Z. L., Yu, Z., Ramdani, J., Droopad, R., Eisenbeiser, K. W., Ramesh, R.

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Development of integrated heterostructures on silicon by MBE von Droopad, R., Curless, J.A., Yu, Z., Jordan, D.C., Liang, Y., Overgaard, C.D., Li, H., Eschrich, T., Craigo, B., Eisenbeiser, K.W., Finder, J., Hu, X., Wei, Y., Edwards, J., Ramdani, J., Tisinger, L., Demkov, A., Moore, K., Marshall, D., Ooms, W.J., Prendergast, J.

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Field effect transistors with SrTiO3 gate dielectric on Si von Eisenbeiser, K., Finder, J. M., Yu, Z., Ramdani, J., Curless, J. A., Hallmark, J. A., Droopad, R., Ooms, W. J., Salem, L., Bradshaw, S., Overgaard, C. D.

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GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer von Eisenbeiser, K., Emrick, R., Droopad, R., Yu, Z., Finder, J., Rockwell, S., Holmes, J., Overgaard, C., Ooms, W.

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GaAs MESFETs fabricated on Si substrates using a SrTiO 3 buffer layer von Eisenbeiser, K., Emrick, R., Droopad, R., Yu, Z., Finder, J., Rockwell, S., Holmes, J., Overgaard, C., Ooms, W.

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Comparative study of Sr and Ba adsorption on Si(1 0 0) von Hu, Xiaoming, Yu, Z., Curless, J.A., Droopad, R., Eisenbeiser, K., Edwards, J.L., Ooms, W.J., Sarid, D.

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Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy von Droopad, R, Yu, Z, Ramdani, J, Hilt, L, Curless, J, Overgaard, C, Edwards, J.L, Finder, J, Eisenbeiser, K, Ooms, W

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Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy von Ramdani, J, Droopad, R, Yu, Z, Curless, J.A, Overgaard, C.D, Finder, J, Eisenbeiser, K, Hallmark, J.A, Ooms, W.J, Kaushik, V, Alluri, P, Pietambaram, S

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GaAs MESFETs fabricated on Si substrates using a SrTiO(3)buffer layer von Eisenbeiser, K, Emrick, R, Droopad, R, Yu, Z, Finder, J, Rockwell, S, Holmes, J, Overgaard, C, Ooms, W

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GaAs MESFETs fabricated on Si substrates using a SrTiO sub(3) buffer layer von Eisenbeiser, K, Emrick, R, Droopad, R, Yu, Z, Finder, J, Rockwell, S, Holmes, J, Overgaard, C, Ooms, W

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Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy von RAMDANI, J, DROOPAD, R, ALLURI, P, PIETAMBARAM, S, YU, Z, CURLESS, J. A, OVERGAARD, C. D, FINDER, J, EISENBEISER, K, HALLMARK, J. A, OOMS, W. J, KAUSHIK, V

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Semiconductor device von EISENBEISER, KURT W, HUANG, JENN-HWA, NAIR, VIJAY K, WANG, YANG

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