Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures von Lin, Yu-Chuan, Ghosh, Ram Krishna, Addou, Rafik, Lu, Ning, Eichfeld, Sarah M., Zhu, Hui, Li, Ming-Yang, Peng, Xin, Kim, Moon J., Li, Lain-Jong, Wallace, Robert M., Datta, Suman, Robinson, Joshua A.

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Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition von Eichfeld, Sarah M, Hossain, Lorraine, Lin, Yu-Chuan, Piasecki, Aleksander F, Kupp, Benjamin, Birdwell, A. Glen, Burke, Robert A, Lu, Ning, Peng, Xin, Li, Jie, Azcatl, Angelica, McDonnell, Stephen, Wallace, Robert M, Kim, Moon J, Mayer, Theresa S, Redwing, Joan M, Robinson, Joshua A

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Two-dimensional gallium nitride realized via graphene encapsulation von Al Balushi, Zakaria Y., Wang, Ke, Ghosh, Ram Krishna, Vilá, Rafael A., Eichfeld, Sarah M., Caldwell, Joshua D., Qin, Xiaoye, Lin, Yu-Chuan, DeSario, Paul A., Stone, Greg, Subramanian, Shruti, Paul, Dennis F., Wallace, Robert M., Datta, Suman, Redwing, Joan M., Robinson, Joshua A.

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Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors von Lin, Yu-Chuan, Jariwala, Bhakti, Bersch, Brian M, Xu, Ke, Nie, Yifan, Wang, Baoming, Eichfeld, Sarah M, Zhang, Xiaotian, Choudhury, Tanushree H, Pan, Yi, Addou, Rafik, Smyth, Christopher M, Li, Jun, Zhang, Kehao, Haque, M. Aman, Fölsch, Stefan, Feenstra, Randall M, Wallace, Robert M, Cho, Kyeongjae, Fullerton-Shirey, Susan K, Redwing, Joan M, Robinson, Joshua A

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Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride von Ruzmetov, Dmitry, Zhang, Kehao, Stan, Gheorghe, Kalanyan, Berc, Bhimanapati, Ganesh R, Eichfeld, Sarah M, Burke, Robert A, Shah, Pankaj B, O’Regan, Terrance P, Crowne, Frank J, Birdwell, A. Glen, Robinson, Joshua A, Davydov, Albert V, Ivanov, Tony G

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Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers von Park, Jun Hong, Vishwanath, Suresh, Liu, Xinyu, Zhou, Huawei, Eichfeld, Sarah M, Fullerton-Shirey, Susan K, Robinson, Joshua A, Feenstra, Randall M, Furdyna, Jacek, Jena, Debdeep, Xing, Huili Grace, Kummel, Andrew C

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Silicon Nanowire Array Photoelectrochemical Cells von Goodey, Adrian P, Eichfeld, Sarah M, Lew, Kok-Keong, Redwing, Joan M, Mallouk, Thomas E

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Dislocation driven spiral and non-spiral growth in layered chalcogenides von Nie, Yifan, Barton, Adam T, Addou, Rafik, Zheng, Yongping, Walsh, Lee A, Eichfeld, Sarah M, Yue, Ruoyu, Cormier, Christopher R, Zhang, Chenxi, Wang, Qingxiao, Liang, Chaoping, Robinson, Joshua A, Kim, Moon, Vandenberghe, William, Colombo, Luigi, Cha, Pil-Ryung, Wallace, Robert M, Hinkle, Christopher L, Cho, Kyeongjae

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Scanning Tunneling Microscopy Observation of Phonon Condensate von Altfeder, Igor, Voevodin, Andrey A., Check, Michael H., Eichfeld, Sarah M., Robinson, Joshua A., Balatsky, Alexander V.

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First principles kinetic Monte Carlo study on the growth patterns of WSe2 monolayer von Nie, Yifan, Liang, Chaoping, Zhang, Kehao, Zhao, Rui, Eichfeld, Sarah M, Cha, Pil-Ryung, Colombo, Luigi, Robinson, Joshua A, Wallace, Robert M, Cho, Kyeongjae

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Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth von Eichfeld, Sarah M, Colon, Víctor Oliveros, Nie, Yifan, Cho, Kyeongjae, Robinson, Joshua A

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One dimensional metallic edges in atomically thin WSe2 induced by air exposure von Addou, Rafik, Smyth, Christopher M, Noh, Ji-Young, Lin, Yu-Chuan, Pan, Yi, Eichfeld, Sarah M, Fölsch, Stefan, Robinson, Joshua A, Cho, Kyeongjae, Feenstra, Randall M, Wallace, Robert M

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Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures von Lin, Yu-Chuan, Li, Jun, de la Barrera, Sergio C, Eichfeld, Sarah M, Nie, Yifan, Addou, Rafik, Mende, Patrick C, Wallace, Robert M, Cho, Kyeongjae, Feenstra, Randall M, Robinson, Joshua A

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Stability of semiconducting transition metal dichalcogenides irradiated by soft X-rays and low energy electrons von Walker, Roger C., Bhimanapati, Ganesh R., Shi, Tan, Zhang, Kehao, Eichfeld, Sarah M., Jovanovic, Igor, Robinson, Joshua A.

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Selective-area growth and controlled substrate coupling of transition metal dichalcogenides von Bersch, Brian M, Eichfeld, Sarah M, Lin, Yu-Chuan, Zhang, Kehao, Bhimanapati, Ganesh R, Piasecki, Aleksander F, Labella, Michael, Robinson, Joshua A

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Carrier gas effects on aluminum-catalyzed nanowire growth von Ke, Yue, Hainey, Mel, Won, Dongjin, Weng, Xiaojun, Eichfeld, Sarah M, Redwing, Joan M

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Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry von Eichfeld, Sarah M., Eichfeld, Chad M., Lin, Yu-Chuan, Hossain, Lorraine, Robinson, Joshua A.

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Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl4 von Eichfeld, Sarah M., Shen, Haoting, Eichfeld, Chad M., Mohney, Suzanne E., Dickey, Elizabeth C., Redwing, Joan M.

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Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays von Eichfeld, Sarah M, Ho, Tsung-Ta, Eichfeld, Chad M, Cranmer, Alexana, Mohney, Suzanne E, Mayer, Theresa S, Redwing, Joan M

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Unraveling the Structural and Electronic Properties at the WSe2–Graphene Interface for a Rational Design of van der Waals Heterostructures von Agnoli, Stefano, Ambrosetti, Alberto, Menteş, Tevfik Onur, Sala, Alessandro, Locatelli, Andrea, Silvestrelli, Pier Luigi, Cattelan, Mattia, Eichfeld, Sarah, Deng, Donna D, Robinson, Joshua. A, Avila, José, Chen, Chaoyu, Asensio, Maria Carmen

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