Heart rate variability, vagal activity and the pulse of inflammation von Eftekhari, G., Ahmadi Soleimani, S. M., Mani, A. R.

Volltext

Electrical properties of sulfur-passivated III–V compound devices von Eftekhari, G.

Volltext

The electrical properties of sulfur-passivated and rapidly thermally annealed GaAs metal-oxide-semiconductor structures with the oxide layer grown anodically von Eftekhari, G.

Volltext

The influence of rapid thermal annealing and sulfur passivation on the electrical characteristics of anodically grown InSb MOS structures von EFTEKHARI, G

Volltext

Electrical characterization of rapidly annealed Ni and Pd/n-InP Schottky diodes von Eftekhari, G

Volltext

Characterization of thin SiO2 grown by rapid thermal processing as influenced by processing parameters von EFTEKHARI, G

Volltext

Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer von Eftekhari, G.

Volltext

Applying AHP and Clustering Approaches for Public Transportation Decisionmaking: A Case Study of Isfahan City von Salavati, Alireza, Haghshenas, Hossein, Ghadirifaraz, Bahador, Laghaei, Jamshid, Eftekhari, Ghodrat

Volltext

Reactively sputtered titanium nitride Schottky contacts on n-GaAs and their thermal stability von Eftekhari, G

Volltext

Improvements in the electrical properties of indium oxide/p-InP and indium oxide/n-GaAs heterostructures formed at low reaction temperatures by rapid thermal annealing von Eftekhari, G

Volltext

Electrical conduction through anodic oxides on sulfur passivated InP von EFTEKHARI, G

Volltext

Thermal stability of WNx/n-GaAs Schottky contacts formed by reactive sputtering von Eftekhari, G

Volltext

Thermal Stability of Indium Tin Oxide/n-GaAs Heterostructures with and without Sulfur Passivation von Eftekhari, G.

Volltext

Modification of electrical characteristics of indium tin oxide/p-InP heterostructures by rapid thermal annealing von Eftekhari, G

Volltext

Electrical characteristics of selenium-treated GaAs MIS Schottky diodes von Eftekhari, G

Volltext

Thermal stability of silicide contacts on GaAs using the proximity technique during rapid thermal annealing von Eftekhari, G

Volltext

Characterization of tantalum silicide contacts on GaAs von Eftekhari, G.

Volltext

The Effect of Sulfur Passivation and Rapid Thermal Annealing on the Properties of InAs MOS Structures with the Oxide Layer Deposited by Reactive Sputtering von Eftekhari, G.

Volltext

Electrical Properties of Sulfur Passivated MIS GaAs Diodes von Eftekhari, G.

Volltext

Variation in the effective richardson constant of metal-GaAs and Metal-InP contacts due to the effect of processing parameters von Eftekhari, G.

Volltext