Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions von Coșkun, F. M., Polat, O., Coșkun, M., Turut, A., Caglar, M., Durmus, Z., Efeoğlu, H.

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The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range von Turut, A., Coșkun, M., Coșkun, F.M., Polat, O., Durmuș, Z., Çağlar, M., Efeoğlu, H.

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The temperature induced current transport characteristics in the orthoferrite YbFeO3−δ thin film/p-type Si structure von Polat, O, Coskun, M, Efeoglu, H, Caglar, M, Coskun, F M, Caglar, Y, Turut, A

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Temperature-dependent current–voltage characteristics of the Au/ n-InP diodes with inhomogeneous Schottky barrier height von Cimilli, F.E., Sağlam, M., Efeoğlu, H., Türüt, A.

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The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures von Coșkun, M., Polat, O., Coșkun, F.M., Efeoğlu, H., Caglar, M., Durmus, Z., Turut, A.

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The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry-Perot cavities in sensing applications von Hasar, U C, Ozbek, I Y, Oral, E A, Karacali, T, Efeoglu, H

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Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/n-InP/In Schottky diodes von Cimilli, F. E., Efeoğlu, H., Sağlam, M., Türüt, A.

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High barrier metallic polymer/ p-type silicon Schottky diodes von Onganer, Y, Saǧlam, M, Türüt, A, Efeoǧlu, H, Tüzemen, S

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Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K von KORUCU, D, EFEOGLU, H, TURUT, A, ALTINDAL, S

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Influence of temperature and phase transitions on the Urbach’s tails of absorption spectra for TlInS2 single crystals von Abay, B., Güder, H. S., Efeoǧlu, H., Yoǧurtçu, Y. K.

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Single and Double Fabry-PÉrot Structure Based on Porous Silicon for Chemical Sensors von Karacali, T., Alanyalioglu, M., Efeoglu, H.

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Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts von Abay, B, Onganer, Y, Saǧlam, M, Efeoǧlu, H, Türüt, A, Yoǧurtçu, Y.K

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Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K von Korucu, D., Efeoglu, H., Turut, A., Altindal, S.

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Barrier characteristics of Cd/p-GaTe Schottky diodes based on I–V–T measurements von Abay, B, Çankaya, G, Güder, H S, Efeoglu, H, Yogurtçu, Y K

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Deposition of ZnO thin films by RF&DC magnetron sputtering on silicon and porous-silicon substrates for pyroelectric applications von Cicek, K., Karacali, T., Efeoglu, H., Cakmak, B.

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The temperature induced current transport characteristics in the orthoferrite YbFeO 3− δ thin film/p-type Si structure von Polat, O, Coskun, M, Efeoglu, H, Caglar, M, Coskun, F M, Caglar, Y, Turut, A

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Temperature dependence of the optical energy gap and Urbach-Martienssen's tail in the absorption spectra of the layered semiconductor Tl2GaInSe4 von ABAY, B, GLIDER, H. S, EFEOGLU, H, YOGURTCU, Y. K

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Photoluminescence characterization of GaTe single crystals von Güder, H.S, Abay, B, Efeoğlu, H, Yoğurtçu, Y.K

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Characteristics of metallic polymer and Au Schottky contacts on cleaved surfaces of InSe(:Er) von Abay, B, Onganer, Y, Saǧlam, M, Efeoǧlu, H, Türüt, A, Yoǧurtçu, Y.K

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Electrical transport properties of p-GaTe grown by directional freezing method von Efeoğlu, H, Karacali, T, Abay, B, Yoğurtçu, Y K

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