Electroless copper seed layer deposition on tantalum nitride barrier film von Chong, S.P., Ee, Y.C., Chen, Z., Law, S.B.

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Formation and characterization of Ti–Si–N–O barrier films von Ee, Y.C., Chen, Z., Law, S.B., Xu, S.

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Barrier property of TiSiN films formed by low frequency, high density inductively coupled plasma process von Ee, Y.C., Chen, Z., Wang, W.D., Chi, D.Z., Xu, S., Law, S.B.

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Effect of processing parameters on electroless Cu seed layer properties von Ee, Y.C., Chen, Z., Chan, L., See, Alex K.H., Law, S.B., Tee, K.C., Zeng, K.Y., Shen, L.

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Visible photoluminescence from the annealed TEOS SiO2 von Xu, M., Xu, S., Ee, Y.C., Yong, Clare, Chai, J.W., Huang, S.Y., Long, J.D.

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Bias-Temperature Stability of Ti–Si–N–O Films von Ee, Y. C., Juneja, Jasbir S., Wang, Pei-I, Lu, T.-M., Bakhru, H., Chan, L., Law, S. B., Yong, Clare, Chen, Z., Xu, S.

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Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation von Ee, Y.C., Chen, Z., Law, S.B., Xu, S., Yakovlev, N.L., Lai, M.Y.

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How thick SiO2 cap layer is needed to achieve strong visible photoluminescence from SiO2-buffered SiNx films? von XU, M, CHEN, Q. Y, XU, S, OSTRIKOV, K, WEI, Y, EE, Y. C

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Enhancement of visible photoluminescence in the SiNx films by SiO2 buffer and annealing von Xu, M., Xu, S., Chai, J. W., Long, J. D., Ee, Y. C.

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Electroless copper deposition as a seed layer on TiSiN barrier von Ee, Y. C., Chen, Z., Xu, S., Chan, L., See, K. H., Law, S. B.

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Visible photoluminescence from plasma-synthesized SiO2-buffered SiNx films: Effect of film thickness and annealing temperature von Xu, M., Xu, S., Chai, J. W., Long, J. D., Cheng, Q. J., Ee, Y. C., Ostrikov, K.

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Low Temperature Physical-Chemical Vapor Deposition of Ti-Si-N-O Barrier Films von Ee, Y. C., Chen, Z., Lu, T.-M., Dong, Z. L., Law, S. B.

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Visible photoluminescence from plasma-synthesized Si O 2 -buffered Si N x films: Effect of film thickness and annealing temperature von Xu, M., Xu, S., Chai, J. W., Long, J. D., Cheng, Q. J., Ee, Y. C., Ostrikov, K.

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Enhancement of visible photoluminescence in the Si N x filmsby Si O 2 buffer and annealing von Xu, M., Xu, S., Chai, J. W., Long, J. D., Ee, Y. C.

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Visible photoluminescence from plasma-synthesized SiO{sub 2}-buffered SiN{sub x} films: Effect of film thickness and annealing temperature von Xu, M., Plasma Sources and Applications Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Xu, S., Chai, J. W., Long, J. D., Cheng, Q. J., Institute of Advanced Studies, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616, Ee, Y. C., Ostrikov, K.

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Inline process characterization and control for robust BEOL reliability von Ee, Y. C., Ng, W. L., Tan, J. B., Zhang, F., Shao, W., Chua, J. K., Li, H. X., Lin, B. F., Ng, C. W., Ramanathan, E.

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Shipping and Logistics Management von Lun, Y. H. Venus, Lai, Kee-hung, Cheng, T. C. Edwin, Yang, Dong

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Formation of Ti–Si–N film using low frequency, high density inductively coupled plasma process von Ee, Y. C., Chen, Z., Chan, L., See, K. H., Law, S. B., Xu, S., Tsakadze, Z. L., Rutkevych, P. P., Zeng, K. Y., Shen, L.

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32nm general purpose bulk CMOS technology for high performance applications at low voltage von Arnaud, F., Liu, J., Lee, Y.M., Lim, K.Y., Kohler, S., Chen, J., Moon, B.K., Lai, C.W., Lipinski, M., Sang, L., Guarin, F., Hobbs, C., Ferreira, P., Ohuchi, K., Li, J., Zhuang, H., Mora, P., Zhang, Q., Nair, D.R., Lee, D.H., Chan, K.K., Satadru, S., Yang, S., Koshy, J., Hayter, W., Zaleski, M., Coolbaugh, D.V., Kim, H.W., Ee, Y.C., Sudijono, J., Thean, A., Sherony, M., Samavedam, S., Khare, M., Goldberg, C., Steegen, A.

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Effects of pulsed current on electromigration lifetime von Lim, M.K., Gan, C.L., Tan, T.L., Ee, Y.C., Ng, C.M., Zhang, B.C., Tan, J.B.

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