Coherent X‑ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth von Myint, Peco, Woodward, Jeffrey M., Wang, Chenyu, Zhang, Xiaozhi, Wiegart, Lutz, Fluerasu, Andrei, Headrick, Randall L., Eddy, Charles R., Ludwig, Karl F.

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Thermal atomic layer etching of crystalline GaN using sequential exposures of XeF2 and BCl3 von Johnson, Nicholas R., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles. R., George, Steven M.

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Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions von Yakes, Michael K, Gunlycke, Daniel, Tedesco, Joseph L, Campbell, Paul M, Myers-Ward, Rachael L, Eddy, Charles R, Gaskill, D. Kurt, Sheehan, Paul E, Laracuente, Arnaldo R

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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation von Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

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Structural Characterization of Atomic Layer Deposited Vanadium Dioxide von Kozen, Alexander C., Joress, Howie, Currie, Marc, Anderson, Virginia R., Eddy, Charles R., Wheeler, Virginia D.

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Quantum Linear Magnetoresistance in Multilayer Epitaxial Graphene von Friedman, Adam L., Tedesco, Joseph L., Campbell, Paul M., Culbertson, James C., Aifer, Edward, Perkins, F. Keith, Myers-Ward, Rachael L., Hite, Jennifer K., Eddy, Charles R., Jernigan, Glenn G., Gaskill, D. Kurt

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Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates von Caldwell, Joshua D, Anderson, Travis J, Culbertson, James C, Jernigan, Glenn G, Hobart, Karl D, Kub, Fritz J, Tadjer, Marko J, Tedesco, Joseph L, Hite, Jennifer K, Mastro, Michael A, Myers-Ward, Rachael L, Eddy, Charles R, Campbell, Paul M, Gaskill, D. Kurt

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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films von Tadjer, M. J., Anderson, T. J., Hobart, K. D., Feygelson, T. I., Caldwell, J. D., Eddy, C. R., Kub, F. J., Butler, J. E., Pate, B., Melngailis, J.

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Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates von Hite, Jennifer K, Robinson, Zachary R, Eddy, Charles R, Feigelson, Boris N

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The role of plasma in plasma-enhanced atomic layer deposition of crystalline films von Boris, David R., Wheeler, Virginia D., Nepal, Neeraj, Qadri, Syed B., Walton, Scott G., Eddy, Charles (Chip) R.

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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation von Koehler, Andrew D., Nepal, Neeraj, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Eddy, Charles R., Kub, Francis J.

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Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale von Robinson, Joshua A, Wetherington, Maxwell, Tedesco, Joseph L, Campbell, Paul M, Weng, Xiaojun, Stitt, Joseph, Fanton, Mark A, Frantz, Eric, Snyder, David, VanMil, Brenda L, Jernigan, Glenn G, Myers-Ward, Rachael L, Eddy, Charles R, Gaskill, D. Kurt

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Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices von Nepal, Neeraj, Wheeler, Virginia D, Anderson, Travis J, Kub, Francis J, Mastro, Michael A, Myers-Ward, Rachael L, Qadri, Syed B, Freitas, Jaime A, Hernandez, Sandra C, Nyakiti, Luke O, Walton, Scott G, Gaskill, Kurt, Eddy, Charles R

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Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties von Greenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Hobart, Karl D., Kub, Francis J.

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Chemical etching behaviors of semipolar (112&cmb.macr;2) and nonpolar (112&cmb.macr;0) gallium nitride films von Jung, Younghun, Baik, Kwang Hyeon, Mastro, Michael A, Hite, Jennifer K, Eddy, Charles R, Kim, Jihyun

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Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process von Tadjer, Marko J., Anderson, Travis J., Feygelson, Tatyana I., Hobart, Karl D., Hite, Jennifer K., Koehler, Andrew D., Wheeler, Virginia D., Pate, Bradford B., Eddy Jr, Charles R., Kub, Fritz J.

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Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates von Hwang, Wan Sik, Zhao, Pei, Tahy, Kristof, Nyakiti, Luke O., Wheeler, Virginia D., Myers-Ward, Rachael L., Eddy, Charles R., Gaskill, D. Kurt, Robinson, Joshua A., Haensch, Wilfried, Xing, Huili (Grace), Seabaugh, Alan, Jena, Debdeep

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GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes von Kim, Byung-Jae, Yang, Gwangseok, Kim, Hong-Yeol, Baik, Kwang Hyeon, Mastro, Michael A, Hite, Jennifer K, Eddy, Jr, Charles R, Ren, Fan, Pearton, Stephen J, Kim, Jihyun

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Magneto-optical fingerprints of distinct graphene multilayers using the giant infrared Kerr effect von Ellis, Chase T., Stier, Andreas V., Kim, Myoung-Hwan, Tischler, Joseph G., Glaser, Evan R., Myers-Ward, Rachael L., Tedesco, Joseph L., Eddy, Charles R., Gaskill, D. Kurt, Cerne, John

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Self-Assembled Monolayers of Alkylphosphonic Acid on GaN Substrates von Ito, Takashi, Forman, Sarah M, Cao, Chundi, Li, Feng, Eddy, Charles R, Mastro, Michael A, Holm, Ronald T, Henry, Richard L, Hohn, Keith L, Edgar, J. H

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