Activation of Mg implanted in GaN by multicycle rapid thermal annealing von Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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An AlN/Ultrathin AlGaN/GaN HEMT Structure for Enhancement-Mode Operation Using Selective Etching von Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.

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Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy von Nepal, N., Goswami, R., Qadri, S.B., Mahadik, N.A., Kub, F.J., Eddy, C.R.

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays von Kim, B.J., Jung, H., Shin, J., Mastro, M.A., Eddy, C.R., Hite, J.K., Kim, S.H., Bang, J., Kim, J.

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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm von Jun Hu, Xiaobin Xin, Xueqing Li, Zhao, J.H., VanMil, B.L., Kok-Keong Lew, Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth von Anderson, T.J., Tadjer, M.J., Mastro, M.A., Hite, J.K., Hobart, K.D., Eddy, C.R., Kub, F.J.

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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 von VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P

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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates von Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

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Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD von Hite, J.K., Anderson, T.J., Luna, L.E., Gallagher, J.C., Mastro, M.A., Freitas, J.A., Eddy, C.R.

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN von Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm von Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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Correlation of threading screw dislocation density to GaN 2‐DEG mobility von Hite, J.K., Gaddipati, P., Meyer, D.J., Mastro, M.A., Eddy, C.R.

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

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Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging von Picard, Y.N., Twigg, M.E., Caldwell, J.D., Eddy, C.R., Mastro, M.A., Holm, R.T.

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Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor von Wei, D., Hossain, T., Garces, N. Y., Nepal, N., Meyer, H. M., Kirkham, M. J., Eddy, C. R., Edgar, J. H.

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Approach for dislocation free GaN epitaxy von Hite, J.K., Mastro, M.A., Eddy, C.R.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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