Silicon Carbide as a Platform for Power Electronics von Eddy, C. R., Gaskill, D. K.

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Activation of Mg implanted in GaN by multicycle rapid thermal annealing von Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R

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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN von Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.

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Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas von Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K

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Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy von Nepal, N., Qadri, S. B., Hite, J. K., Mahadik, N. A., Mastro, M. A., Eddy, C. R.

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Low-Phase-Noise Graphene FETs in Ambipolar RF Applications von Moon, J S, Curtis, D, Zehnder, D, Kim, S, Gaskill, D K, Jernigan, G G, Myers-Ward, R L, Eddy, C R, Campbell, P M, Lee, K.-M, Asbeck, P

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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm von Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

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Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process von Nath, A., Koehler, A. D., Jernigan, G. G., Wheeler, V. D., Hite, J. K., Hernández, S. C., Robinson, Z. R., Garces, N. Y., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Rao, M. V.

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Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect von Kuehne, P, Darakchieva, Vanya, Yakimova, Rositsa, Tedesco, J D., Myers-Ward, R L., Jr Eddy, C R., Gaskill, D K., Herzinger, C M., Woollam, J A., Schubert, M, Hofmann, T

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC von Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

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GaN vertical and lateral polarity heterostructures on GaN substrates von Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.

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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface von Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities von Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

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Assembly of phosphonic acids on GaN and AlGaN von Simpkins, B S, Hong, S, Stine, R, Mäkinen, A J, Theodore, N D, Mastro, M A, Eddy, C R, Pehrsson, P E

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Approach for dislocation free GaN epitaxy von Hite, J.K., Mastro, M.A., Eddy, C.R.

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Investigation of the Epitaxial Graphene/p-SiC Heterojunction von Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.

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Hall effect mobility of epitaxial graphene grown on silicon carbide von Tedesco, J. L., VanMil, B. L., Myers-Ward, R. L., McCrate, J. M., Kitt, S. A., Campbell, P. M., Jernigan, G. G., Culbertson, J. C., Eddy, C. R., Gaskill, D. K.

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Investigation of three-step epilayer growth approach of GaN films to minimize compensation von EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E

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Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene von Nyakiti, L.O., Wheeler, V.D., Garces, N.Y., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

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Surface depletion effects in semiconducting nanowires von Simpkins, B. S., Mastro, M. A., Eddy, C. R., Pehrsson, P. E.

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