SnSe2 field-effect transistors with high drive current von Su, Yang, Ebrish, Mona A., Olson, Eric J., Koester, Steven J.

Volltext

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques von Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

Volltext

12.5 kV GaN Super-Heterojunction Schottky Barrier Diodes von Han, Sang-Woo, Song, Jianan, Sadek, Mansura, Molina, Alex, Ebrish, Mona A., Mohney, Suzanne E., Anderson, Travis J., Chu, Rongming

Volltext

Using machine learning with optical profilometry for GaN wafer screening von Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

Volltext

A Simple Edge Termination Design for Vertical GaN P-N Diodes von Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

Volltext

Effect of Noncovalent Basal Plane Functionalization on the Quantum Capacitance in Graphene von Ebrish, Mona A, Olson, Eric J, Koester, Steven J

Volltext

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination von Ebrish, Mona, Porter, Matthew, Jacobs, Alan, Gallagher, James, Kaplar, Robert, Gunning, Brendan, Hobart, Karl, Anderson, Travis

Volltext

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments von Foster, Geoffrey M., Koehler, Andrew, Ebrish, Mona, Gallagher, James, Anderson, Travis, Noesges, Brenton, Brillson, Leonard, Gunning, Brendan, Hobart, Karl D., Kub, Francis

Volltext

Capacitive Sensing of Intercalated H2O Molecules Using Graphene von Olson, Eric J, Ma, Rui, Sun, Tao, Ebrish, Mona A, Haratipour, Nazila, Min, Kyoungmin, Aluru, Narayana R, Koester, Steven J

Volltext

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance von Gallagher, James C., Anderson, Travis J., Koehler, Andrew D., Ebrish, Mona A., Foster, Geoffrey M., Mastro, Michael A., Hite, Jennifer K., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Kub, Francis J.

Volltext

Graphene-Based Quantum Capacitance Wireless Vapor Sensors von Deen, David A., Olson, Eric J., Ebrish, Mona A., Koester, Steven J.

Volltext

Process Optimization for Selective Area Doping of GaN by Ion Implantation von Ebrish, Mona A., Anderson, Travis J., Jacobs, Alan G., Gallagher, James C., Hite, Jennifer K., Mastro, Michael A., Feigelson, Boris N., Wang, Yekan, Liao, Michael, Goorsky, Mark, Hobart, Karl D.

Volltext

A Study on the Impact of Mid-Gap Defects on Vertical GaN Diodes von Ebrish, Mona A., Anderson, Travis J., Koehler, Andrew D., Foster, Geoffrey M., Gallagher, James C., Kaplar, Robert J., Gunning, Brendan P., Hobart, Karl D.

Volltext

Study of anode doping and avalanche in foundry compatible 1.2 kV vertical GaN PiN diodes von Ebrish, Mona A., Porter, Matthew, Jacobs, Alan, Gallagher, James C., Kaplar, Robert J., Gunning, Brendan P., Hobart, Karl D., Anderson, Travis J.

Volltext

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates von Tadjer, Marko J, Alema, Fikadu, Osinsky, Andrei, Mastro, Michael A, Nepal, Neeraj, Woodward, Jeffrey M, Myers-Ward, Rachael L, Glaser, Evan R, Freitas, Jaime A, Jacobs, Alan G, Gallagher, James C, Mock, Alyssa L, Pennachio, Daniel J, Hajzus, Jenifer, Ebrish, Mona, Anderson, Travis J, Hobart, Karl D, Hite, Jennifer K, Eddy Jr, Charles R

Volltext

Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy von Tadjer, Marko J., Sasaki, Kohei, Wakimoto, Daiki, Anderson, Travis J., Mastro, Michael A., Gallagher, James C., Jacobs, Alan G., Mock, Alyssa L., Koehler, Andrew D., Ebrish, Mona, Hobart, Karl D., Kuramata, Akito

Volltext

(Invited) GaN Homoepitaxial Growth and Substrate-Dependent Effects for Vertical Power Devices von Hite, Jennifer K., Mastro, Michael A, Anderson, Travis J., Gallagher, James C., Ebrish, Mona, Freitas, Jaime A.

Volltext

Characterization of β-Ga 2 O 3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates von Tadjer, Marko J, Alema, Fikadu, Osinsky, Andrei, Mastro, Michael A, Nepal, Neeraj, Woodward, Jeffrey M, Myers-Ward, Rachael L, Glaser, Evan R, Freitas, Jaime A, Jacobs, Alan G, Gallagher, James C, Mock, Alyssa L, Pennachio, Daniel J, Hajzus, Jenifer, Ebrish, Mona, Anderson, Travis J, Hobart, Karl D, Hite, Jennifer K, Eddy Jr, Charles R

Volltext

Capacitive Sensing of Intercalated H 2 O Molecules Using Graphene von Olson, Eric J., Ma, Rui, Sun, Tao, Ebrish, Mona A., Haratipour, Nazila, Min, Kyoungmin, Aluru, Narayana R., Koester, Steven J.

Volltext

Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics von Ebrish, Mona A., Deen, David A., Koester, Steven J.

Volltext