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    Mathematical Model of Metal–Oxide Memristor Resistive Switching based on Full Physical Model of Heat and Mass Transfer of Oxygen Vacancies and Ions

    Mathematical Model of Metal–Oxide Memristor Resistive Switching based on Full Physical Model of Heat and Mass Transfer of Oxygen Vacancies and Ions von Busygin, Alexander Nikolaevich, Udovichenko, Sergey Yurievich, Ebrahim, Abdullah Haidar Abdo, Bobylev, Andrey Nikolaevich, Gubin, Alexey Alexandrovich


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