On the doping of graphene von Jones, R., Eberlein, T. A. G., Briddon, P. R.

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Electrical activity of Er and Er-O centers in silicon von PREZZI, D, EBERLEIN, T. A. G, JONES, R, FILHOL, J. S, COUTINHO, J, SHAW, M. J, BRIDDON, P. R

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Movement and pinning of dislocations in SiC von Eberlein, T. A. G., Jones, R., Blumenau, A. T., Öberg, S., Briddon, P. R.

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Shallow acceptors in GaN von Eberlein, T. A. G., Jones, R., Öberg, S., Briddon, P. R.

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Effect of charge on the movement of dislocations in SiC von Eberlein, T. A. G., Jones, R., Blumenau, A. T., Öberg, S., Briddon, P. R.

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Hydrogen molecules in 4H-SiC and 2H-GaN von Eberlein, T A G, Huggett, L, Jones, R, Briddon, P R

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Hydrogen-related photoluminescent centers in SiC von PREZZI, D, EBERLEIN, T. A. G, JONES, R, HOURAHINE, B, BRIDDON, P. R, ÖBERG, S

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Density functional theory calculation of the D I optical center in SiC von Eberlein, T. A. G., Jones, R., Öberg, S., Briddon, P. R.

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Electrical and optical properties of rod-like defects in silicon von Goss, J. P., Briddon, P. R., Eberlein, T. A. G., Jones, R., Pinho, N., Blumenau, A. T., Öberg, S.

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Planar interstitial aggregates in Si von Goss, J P, Eberlein, T A G, Jones, R, Pinho, N, Blumenau, A T, Frauenheim, T, Briddon, P R, Öberg, S

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Z1/Z2 defects in 4H-SiC von Eberlein, T A G, Jones, R, Briddon, P R

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Z 1 / Z 2 Defects in 4 H − S i C von Eberlein, T. A. G., Jones, R., Briddon, P. R.

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Theory of Dislocations in SiC: The Effect of Charge on Kink Migration von Blumenau, A.T., Jones, R., Eberlein, T.A.G.

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The effect of charge on kink migration at 90° partial dislocations in SiC von Blumenau, A. T., Eberlein, T. A. G., Jones, R., Öberg, S., Frauenheim, T., Briddon, P. R.

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Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon von Öberg, Sven, Eberlein, T.A.G., Briddon, Patrick R., Fujita, N., Jones, R.

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Ro-vibrational modes of H2 in 4H–SiC and 2H–GaN von Eberlein, T.A.G., Huggett, L., Jones, R., Briddon, P.R.

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Doping of graphene: Density functional calculations of charge transfer between GaAs and carbon nanostructures von Eberlein, T. A. G., Jones, R., Goss, J. P., Briddon, P. R.

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The effect of charge on kink migration at 90DG partial dislocations in SiC von Blumenau, A T, Eberlein, T A G, Jones, R, Oberg, S, Frauenheim, T, Briddon, P R

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Optical and electrical properties of vanadium and erbium in 4H-SiC von PREZZI, D, EBERLEIN, T. A. G, FILHOL, J.-S, JONES, R, SHAW, M. J, BRIDDON, P. R, ÖBERG, S

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Ro-vibrational modes of H2 in 4H-SiC and 2H-GaN von EBERLEIN, T. A. G, HUGGETT, L, JONES, R, BRIDDON, P. R

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