Surface Core-Level Binding-Energy Shifts for GaAs(110) and GaSb(110) von Eastman, D. E., Chiang, T. -C., Heimann, P., Himpsel, F. J.

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Observation of columnar microstructure in step-graded Si1-xGex/Si films using high-resolution X-ray microdiffraction von Eastman, D E, Stagarescu, C B, Xu, G, Mooney, P M, Jordan-Sweet, J L, Lai, B, Cai, Z

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Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110) von Eastman, D. E., Freeouf, J. L.

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Experimental Exchange-Split Energy-Band Dispersions for Fe, Co, and Ni von Eastman, D. E., Himpsel, F. J., Knapp, J. A.

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Structure-Dependent 4f-Core-Level Binding Energies for Surface Atoms on Ir(111), Ir(100)-(5 x 1), and Metastable Ir(100)-(1 x 1) von van der Veen, J F, Himpsel, F J, Eastman, D E

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Nanometer precision metrology of submicron Cu/SiO2 interconnects using fluorescence and transmission x-ray microscopy von Xu, Guangyong, Eastman, D. E., Lai, B., Cai, Z., McNulty, I., Frigo, S., Noyan, I. C., Hu, C. K.

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Physical chemistry, by E.D. Eastman and G.K. Rollefson von Eastman, E. D. 1891-1945

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Specific heats of gases at high temperatures / by E.D. Eastman von Eastman, E. D. 1891-1945

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The measurement of low temperatures and the measurement of specific heats between 60 degrees and 300 degrees absolute ... by Ermon Dwight Eastman von Eastman, E. D. 1891-1945

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The vapor pressures of certain amalgams von Eastman, E. D. 1891-1945

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Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors von Eastman, D. E., Freeouf, J. L.

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Quantitative nanoscale metrology study of Cu/SiO2 interconnect technology using transmission x-ray microscopy von Su, X., Stagarescu, C., Xu, G., Eastman, D. E., McNulty, I., Frigo, S. P., Wang, Yuxin, Retsch, Cornelia C., Noyan, I. C., Hu, C.-K.

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Adsorbate band dispersions for C on Ru(0001) von Himpsel, F.J., Christmann, K., Heimann, P., Eastman, D.E., Feibelman, Peter J.

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Experimental energy bands, exchange splittings, and lifetimes for Ni in the vicinity of the x-point von Heimann, P., Himpsel, F.J., Eastman, D.E.

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Quantitative metrology study of Cu/SiO2 interconnect structures using fluorescence x-ray microscopy von Xu, Guangyong, Su, X., Stagarescu, C. B., Eastman, D. E., Lai, B., Cai, Z., Noyan, I. C., Hu, C.-K.

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Photoemission Studies of the Electronic Structure of Transition Metals von Eastman, D. E.

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Observation of opposite 4f-surface core level binding energy shifts for W(111) and Ta(111) von van der Veen, J.F., Heimann, P., Himpsel, F.J., Eastman, D.E.

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Valence Electronic Structure and Charge Transfer in Tetrathiofulvalinium Tetracyanoquinodimethane (TTF-TCNQ) from Photoemission Spectroscopy von Grobman, W. D., Pollak, R. A., Eastman, D. E., Maas, E. T., Scott, B. A.

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Photoemission from physisorbed Co on clean and Xe-covered Al(111) von Chiang, T.-C., Kaindl, G., Eastman, D.E.

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Electronic properties of the clean and hydrogen-covered TiC(111) Ti-terminated polar surface von Bradshaw, A.M., van der Veen, J.F., Himpsel, F.J., Eastman, D.E.

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