Does bright light treatment for winter depression work better than a placebo? von Eastman, C.I., Young, M.A., Fogg, L.F.

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Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs von Ho-Young Cha, Thomas, C.I., Koley, G., Eastman, L.F., Spencer, M.G.

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Gate field emission induced breakdown in power SiC MESFETs von Ho-Young Cha, Thomas, C.I., Choi, Y.C., Eastman, L.F., Spencer, M.G.

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Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs von Cha, Ho-Young, Choi, Y.C., Konstantinov, A.O., Harris, C.I., Ericsson, P., Eastman, L.F., Spencer, M.G.

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Elimination of current instability and improvement of RF power performance using Si 3N 4 passivation in SiC lateral epitaxy MESFETs von Cha, Ho-Young, Choi, Y.C., Konstantinov, A.O., Harris, C.I., Ericsson, P., Eastman, L.F., Spencer, M.G.

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Influence of surface structure on electrical characteristics in SiC MESFETs von Ho-Young Cha, Thomas, C.I., Eastman, L.F., Spencer, M.G.

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Channel recessed 4H-SiC MESFETs with F/sub t/ of 14.5GHz and F/sub max/ of 40GHz von Ho-Young Cha, Thomas, C.I., Koley, G., Hyungtak Kim, Eastman, L.F., Spencer, M.G.

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