Improvement of the LiBH4 hydrogen desorption by inclusion into mesoporous carbons von CAHEN, S, EYMERY, J.-B, JANOT, R, TARASCON, J.-M

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Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors von Tchernycheva, M, Messanvi, A, de Luna Bugallo, A, Jacopin, G, Lavenus, P, Rigutti, L, Zhang, H, Halioua, Y, Julien, F. H, Eymery, J, Durand, C

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Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates von Chen, X. J., Perillat-Merceroz, G., Sam-Giao, D., Durand, C., Eymery, J.

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells von Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.

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Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy von Koester, R, Hwang, J S, Durand, C, Le Si Dang, D, Eymery, J

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Self-powered proton detectors based on GaN core–shell p–n microwires von Verheij, D., Peres, M., Cardoso, S., Alves, L. C., Alves, E., Durand, C., Eymery, J., Fernandes, J., Lorenz, K.

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Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires von Messanvi, A, Zhang, H, Neplokh, V, Julien, F. H, Bayle, F, Foldyna, M, Bougerol, C, Gautier, E, Babichev, A, Durand, C, Eymery, J, Tchernycheva, M

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Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures von Girard, G., Berthelon, R., Andrieu, F., Leake, S. J., Chahine, G. A., Schülli, T., Eymery, J., Favre-Nicolin, V.

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Bragg coherent diffraction imaging of single 20 nm Pt particles at the ID01‐EBS beamline of ESRF von Richard, M.-I., Labat, S., Dupraz, M., Li, N., Bellec, E., Boesecke, P., Djazouli, H., Eymery, J., Thomas, O., Schülli, T. U., Santala, M. K., Leake, S. J.

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GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors von Salomon, S, Eymery, J, Pauliac-Vaujour, E

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Radiation sensors based on GaN microwires von Verheij, D, Peres, M, Cardoso, S, Alves, L C, Alves, E, Durand, C, Eymery, J, Lorenz, K

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Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy von Chen, X. J., Gayral, B., Sam-Giao, D., Bougerol, C., Durand, C., Eymery, J.

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Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewal... von Mancini, L., Hernández-Maldonado, D., Lefebvre, W., Houard, J., Blum, I., Vurpillot, F., Eymery, J., Durand, C., Tchernycheva, M., Rigutti, L.

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Time-dependent relaxation of strained silicon-on-insulator lines using a partially coherent x-ray nanobeam von Mastropietro, F, Eymery, J, Carbone, G, Baudot, S, Andrieu, F, Favre-Nicolin, V

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Comprehensive analyses of core-shell InGaN/GaN single nanowire photodiodes von Zhang, H, Guan, N, Piazza, V, Kapoor, A, Bougerol, C, Julien, F H, Babichev, A V, Cavassilas, N, Bescond, M, Michelini, F, Foldyna, M, Gautier, E, Durand, C, Eymery, J, Tchernycheva, M

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Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging von Favre-Nicolin, V, Mastropietro, F, Eymery, J, Camacho, D, Niquet, Y M, Borg, B M, Messing, M E, Wernersson, L-E, Algra, R E, Bakkers, E P A M, Metzger, T H, Harder, R, Robinson, I K

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Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy von Bugallo, A. De Luna, Rigutti, L., Jacopin, G., Julien, F. H., Durand, C., Chen, X. J., Salomon, D., Eymery, J., Tchernycheva, M.

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Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate von BAVENCOVE, A.-L, SALOMON, D, LE SI DANG, GILET, P, LAFOSSAS, M, MARTIN, B, DUSSAIGNE, A, LEVY, F, ANDRE, B, FERRET, P, DURAND, C, EYMERY, J

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Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy von Lavenus, P, Messanvi, A, Rigutti, L, De Luna Bugallo, A, Zhang, H, Bayle, F, Julien, F H, Eymery, J, Durand, C, Tchernycheva, M

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Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate von Chen, X.J., Hwang, J.S., Perillat-Merceroz, G., Landis, S., Martin, B., Le Si Dang, D., Eymery, J., Durand, C.

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