Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates von Deen, David A., Storm, David F., Meyer, David J., Bass, Robert, Binari, Steven C., Gougousi, Theodosia, Evans, Keith R.

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Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates von Liu, Guangyu, Zhang, Jing, Li, Xiao-Hang, Huang, G.S., Paskova, Tanya, Evans, Keith R., Zhao, Hongping, Tansu, Nelson

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GaN Substrates for III-Nitride Devices von Paskova, Tanya, Hanser, Drew A., Evans, Keith R.

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Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates von Liu, Fang, Huang, Li, Kamaladasa, Ranga, Picard, Yoosuf N., Preble, Edward A., Paskova, Tanya, Evans, Keith R., Davis, Robert F., Porter, Lisa M.

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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate von Wang, Yaqi, Alur, Siddharth, Sharma, Yogesh, Tong, Fei, Thapa, Resham, Gartland, Patrick, Issacs-Smith, Tamara, Ahyi, Claude, Williams, John, Park, Minseo, Johnson, Mark, Paskova, Tanya, Preble, Edward A, Evans, Keith R

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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates von Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

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In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation von Xu, Hui, Alur, Siddharth, Wang, Yaqi, Cheng, An-Jen, Kang, Kilho, Sharma, Yogeshkumar, Park, Minseo, Ahyi, Claude, Williams, John, Gu, Chaokang, Hanser, Andrew, Paskova, Tanya, Preble, Edward A., Evans, Keith R., Zhou, Yi

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GaN Substrates-Progress, Status, and Prospects von Paskova, T., Evans, K.R.

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Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer von Wang, Yaqi, Xu, Hui, Alur, Siddharth, Sharma, Yogesh, Tong, Fei, Gartland, Patrick, Issacs-Smith, Tamara, Ahyi, Claude, Williams, John, Park, Minseo, Wheeler, Ginger, Johnson, Mark, Allerman, Andrew A., Hanser, Andrew, Paskova, Tanya, Preble, Edward A., Evans, Keith R.

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Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates von Eichfeld, Sarah M., Won, Dongjin, Trumbull, Kathy, Labella, Michael, Weng, Xiaojun, Robinson, Joshua, Snyder, David, Redwing, Joan M., Paskova, Tanya, Udwary, Kevin, Mulholland, Greg, Preble, Ed, Evans, Keith R.

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Gallium incorporation kinetics during gas source molecular beam epitaxy growth of GaN von Evans, Keith R., Lei, Ting, Jones, Charles R.

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Leased Equipment: When Does a Permanent Establishment Exist? von Evans, Keith R

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Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography von Liu, Fang, Huang, Li, Davis, Robert F., Porter, Lisa M., Schreiber, Daniel K., Kuchibatla, Satyanarayana V. N. T., Shutthanandan, Vaithiyalingam, Thevuthasan, Suntharampillai, Preble, Edward A., Paskova, Tania, Evans, Keith R.

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Sb-surface segregation and the control of compositional abruptness at the [formula omitted] interface von Kaspi, Ron, Evans, Keith R.

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Harm reduction: roads less travelled to the holy grail von Roche, A M, Evans, K R, Stanton, W R

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High Electron Velocity Submicrometer AIN/GaN MOS-HEMTs on Freestanding GaN Substrates von MEYER, David J, DEEN, David A, PASKOVA, Tanya, PREBLE, Edward A, EVANS, Keith R, STORM, David F, ANCONA, Mario G, KATZER, D. Scott, BASS, Robert, ROUSSOS, Jason A, DOWNEY, Brian P, BINARI, Steven C, GOUGOUSI, Theodosia

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Canadian East coast offshore oil and gas industry: Sustainable development through cooperative federalism von Keith R Evans

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Harm reduction: roads less travelled to the Holy Grail von Roche, Ann M., Evans, Keith R., Stanton, Warren R.

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Optical and structural properties of Si doped $\beta$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy von Kucukgok, Bahadir, Mandia, David J, Leach, Jacob H, Evans, Keith R, Eastman, Jeffrey A, Zhou, Hua, Hryn, John, Elam, Jeffrey W, Yanguas-Gil, Angel

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Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs von Chattopadhyay, K., Aubel, J., Sundaram, S., Ehret, J. E., Kaspi, R., Evans, Keith R.

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