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  1. 1
    Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof

    Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof von Hu, Binghua, Eugen, Mindricelu P, Gilmore, Damien T, Wofford, Bill A

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  2. 2
    Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof

    Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereof von GILMORE DAMIEN T, EUGEN MINDRICELU P, HU BINGHUA, WOFFORD BILL A

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  3. 3
    Semiconductor Device Having Improved Oxide Thickness at a Shallow Trench Isolation Edge and Method of Manufacture Thereof

    Semiconductor Device Having Improved Oxide Thickness at a Shallow Trench Isolation Edge and Method of Manufacture Thereof von GILMORE DAMIEN T, EUGEN MINDRICELU P, HU BINGHUA, WOFFORD BILL A

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