Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC von Matsuura, Hideharu, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Ishida, Yuuki, Yoshida, Sadafumi

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Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping von Eto, Kazuma, Suo, Hiromasa, Kato, Tomohisa, Okumura, Hajime

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Research on air conditioning energy use and indoor thermal environment with Private Finance Initiative data monitoring of junior high schools before and during the COVID-19 pandemi... von Sekartaji, Dian, Ryu, Yuji, Novianto, Didit, Eto, Kazuma, Gao, Weijun

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Energy-Use and Indoor Thermal Performance in Junior High School Building after Air-Conditioning Installation with the Private Finance Initiative von Sekartaji, Dian, Ryu, Yuji, Novianto, Didit, Eto, Kazuma, Gao, Weijun

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Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC von Matsuura, Hideharu, Takeshita, Akinobu, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

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Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate von Suo, Hiromasa, Yamashita, Tamotsu, Eto, Kazuma, Osawa, Hiroshi, Kato, Tomohisa, Okumura, Hajime

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Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC von Matsuura, Hideharu, Kondo, Yuki, Iida, Kosuke, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

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Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC von Suo, Hiromasa, Tsukimoto, Susumu, Eto, Kazuma, Osawa, Hiroshi, Kato, Tomohisa, Okumura, Hajime

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Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region von Takeshita, Akinobu, Ji, Shi Yang, Yoshida, Sadafumi, Nishihata, Rinya, Ogawa, Kohei, Imamura, Tatsuya, Kato, Tomohisa, Okumura, Hajime, Takano, Kota, Kojima, Kazutoshi, Hidaka, Atsuki, Eto, Kazuma, Matsuura, Hideharu, Okuda, Kazuya

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Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC von Takeshita, Akinobu, Yoshida, Sadafumi, Ogawa, Kohei, Imamura, Tatsuya, Mitani, Takeshi, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime, Eto, Kazuma, Takano, Kota, Hidaka, Atsuki, Matsuura, Hideharu, Ji, Shi Yang, Okuda, Kazuya

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Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers von Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

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Corrigendum: "Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC" [Jpn. J. Appl. Phys. 57, 065501 (2018)] von Suo, Hiromasa, Tsukimoto, Susumu, Eto, Kazuma, Osawa, Hiroshi, Kato, Tomohisa, Okumura, Hajime

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Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration von Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shiyang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime

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Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers von Nishihata, Rinya, Okumura, Hajime, Yoshida, Sadafumi, Okuda, Kazuya, Ji, Shi Yang, Kato, Tomohisa, Imamura, Tatsuya, Hidaka, Atsuki, Matsuura, Hideharu, Takeshita, Akinobu, Eto, Kazuma, Kojima, Kazutoshi, Takano, Kota

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Bulk growth of low resistivity n-type 4H-SiC using co-doping von Suo, H., Eto, K., Kato, T., Kojima, K., Osawa, H., Okumura, H.

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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC von Matsuura, Hideharu, Takeshita, Akinobu, Eto, Kazuma, Yoshida, Sadafumi, Okuda, Kazuya, Ji, Shi Yang, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime, Imamura, Tatsuya, Hidaka, Atsuki, Takano, Kota

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Hopping conduction range of heavily Al-doped 4H-SiC thick epilayers grown by CVD von Ji, Shiyang, Eto, Kazuma, Yoshida, Sadafumi, Kojima, Kazutoshi, Ishida, Yuuki, Saito, Shingo, Tsuchida, Hidekazu, Okumura, Hajime

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Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-... von Eto, Kazuma, Mitani, Takeshi, Momose, Kenji, Kato, Tomohisa

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Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth von Mitani, Takeshi, Eto, Kazuma, Komatsu, Naoyoshi, Hayashi, Yuichiro, Suo, Hiromasa, Kato, Tomohisa

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Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC von Mitani, Takeshi, Kawanishi, Sakiko, Eto, Kazuma, Kato, Tomohisa, Chaussende, Didier, Yoshikawa, Takeshi

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