Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping von Bebek, M. B., Stanley, C. M., Gibbons, T. M., Estreicher, S. K.

Volltext

Phonons and defects in semiconductors and nanostructures: Phonon trapping, phonon scattering, and heat flow at heterojunctions von Estreicher, S. K., Gibbons, T. M., Kang, By, Bebek, M. B.

Volltext

First-principles calculations of vibrational lifetimes and decay channels: hydrogen-related modes in Si von West, D, Estreicher, S K

Volltext

Three carbon pairs in Si von Docaj, A., Estreicher, S.K.

Volltext

Temperature and sample dependence of the binding free energies of complexes in crystals : The case of acceptor-oxygen complexes in Si von SANATI, M, ESTREICHER, S. K

Volltext

Thermodynamics of impurities in semiconductors von ESTREICHER, S. K, SANATI, M, WEST, D, RUYMGAART, F

Volltext

Ag and Ag–Cu interactions in Si von Vincent, T. M., Estreicher, S. K.

Volltext

Thermal conductivity of Si nanowires: A first-principles analysis of the role of defects von Kang, By, Estreicher, S. K.

Volltext

The Cu photoluminescence defect and the early stages of Cu precipitation in Si von Vincent, T. M., Estreicher, S. K., Weber, J., Kolkovsky, V., Yarykin, N.

Volltext

Thermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it von Estreicher, S. K., Gibbons, T. M., Bebek, M. B.

Volltext

Unexpected dynamics for self-interstitial clusters in silicon von Estreicher, S K, Gharaibeh, M, Fedders, P A, Ordejón, P

Volltext

Nickel: A very fast diffuser in silicon von Lindroos, J., Fenning, D. P., Backlund, D. J., Verlage, E., Gorgulla, A., Estreicher, S. K., Savin, H., Buonassisi, T.

Volltext

Specific heat and entropy of GaN von Sanati, M, Estreicher, S K

Volltext

Heat capacity of α-GaN : Isotope effects von KREMER, R. K, CARDONA, M, SCHMITT, E, BLUMM, J, ESTREICHER, S. K, SANATI, M, BOCKOWSKI, M, GRZEGORY, I, SUSKI, T, JEZOWSKI, A

Volltext

Cobalt-related defects in silicon von Gibbons, T. M., Backlund, D. J., Estreicher, S. K.

Volltext

Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys von Stübner, R., Kolkovsky, Vl, Weber, J., Abrosimov, N. V., Stanley, C. M., Backlund, D. J., Estreicher, S. K.

Volltext

Non-equilibrium dynamics for impurities in semiconductors von Estreicher, S.K., Backlund, D., Gibbons, T.M.

Volltext

First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si von Estreicher, S K, West, D, Goss, J, Knack, S, Weber, J

Volltext

Phonon-phonon interactions: First principles theory von Gibbons, T. M., Bebek, M. B., Kang, By, Stanley, C. M., Estreicher, S. K.

Volltext

Isotopic dependence of the heat capacity of c-C, Si, and Ge: an ab initio calculation von Sanati, M, Estreicher, S.K, Cardona, M

Volltext