1200V SiC Trench-MOSFET optimized for high reliability and high performance von Peters, D., Aichinger, T., Basler, T., Bergner, W., Kueck, D., Esteve, R.

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Surface-Passivation Effects on the Performance of 4H-SiC BJTs von Ghandi, R, Buono, B, Domeij, M, Esteve, R, Schöner, A, Jisheng Han, Dimitrijev, S, Reshanov, S A, Zetterling, C-M, Östling, M

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Distributions of electric parameters in MOS structures on 3C-SiC substrate von Piskorski, Krzysztof, Przewlocki, Henryk M., Esteve, Romain, Bakowski, Mietek

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Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs von Dimitrijev, Sima, Ghandi, Reza, Esteve, Romain, Reshanov, Sergey A., Östling, Mikael, Zetterling, Carl Mikael, Schöner, Adolf, Buono, Benedetto, Domeij, Martin, Han, Ji Sheng

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Investigation on the Effect of Ge Co-Doped Epitaxy on 4H-SiC Based MPS Diodes and Trench MOSFETs von Rupp, Roland, Heidorn, Christian, Höchbauer, Tobias, Esteve, Romain

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Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer von Krieger, Michael, Weber, Heiko B., Heidorn, Christian, Höchbauer, Tobias, Esteve, Romain, Rupp, Roland

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Investigation on wet etching 4H-SiC damaged by ion implantation von Guillemin, Sophie, Esteve, Romain, Heidorn, Christian, Unegg, Gerald, Reinwald, Gerald, Hartl, Marcella, Kueck, Daniel

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Litter flammability in oak woodlands and shrublands of southeastern France von Curt, Thomas, Schaffhauser, Alice, Borgniet, Laurent, Dumas, Claire, Estève, Roland, Ganteaume, Anne, Jappiot, Marielle, Martin, Willy, N’Diaye, Aminata, Poilvet, Benjamin

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An electrical and physical study of crystal damage in high-dose Al- and N-implanted 4H-SiC von Fisher, C. A., Esteve, R., Doering, S., Roesner, M., De Biasio, M., Kraft, M., Schustereder, W., Rupp, R.

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Advanced oxidation process combining oxide deposition and short postoxidation step for N-type 3C- and 4H-SiC von Esteve, R., Schöner, A., Reshanov, S. A., Zetterling, C.-M., Nagasawa, H.

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Characterization of Band Diagrams of Different Metal-SiO2-SiC(3C) Structures von Esteve, Romain, Bakowski, Mietek, Przewlocki, Henryk M., Piskorski, Krzysztof

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Trita-ICT/MAP AVH von Esteve Romain 1984- , KTH, Integrerade komponenter och kretsar, Esteve Romain 1984-, KTH, Integrated components and circuits

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Comparative study of thermally grown oxides on n-type free standing 3C-SiC (001) von Esteve, R., Schöner, A., Reshanov, S. A., Zetterling, C.-M., Nagasawa, H.

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MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001) von Lorenzzi, Jean, Esteve, Romain, Jegenyes, Nikoletta, Reshanov, Sergey A., Schöner, Adolf, Ferro, Gabriel

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Semiconductor device with improved junction termination extension region von Böttcher, Tim, Esteve, Romain

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High Quality 3C-SiC Substrate for MOSFET Fabrication von Reshanov, Sergey A., Esteve, Romain, Yagi, Kuniaki, Hatta, Naoki, Uchida, Hidetsugu, Kobayashi, Motoki, Schöner, Adolf, Nagasawa, Hiroyuki, Kawahara, Takamitsu

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Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures von Esteve, R., Reshanov, S. A., Savage, S., Bakowski, M., Kaplan, W., Persson, S., Schöner, A., Zetterling, C.-M.

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3C-SiC MOSFET with High Channel Mobility and CVD Gate Oxide von Schöner, Adolf, Sakata, Toyokazu, Esteve, Romain, Kobayashi, Motoki, Uchida, Hidetsugu, Minami, Akiyuki

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Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate von Lorenzzi, Jean, Esteve, Romain, Carole, Davy, Ferro, Gabriel, Tournier, Dominique, Lazar, Mihai

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Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors von Gutt, T., Małachowski, T., Przewłocki, H.M., Engström, O., Bakowski, M., Esteve, R.

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