A model for internal photoemission at high- k oxide/silicon energy barriers von Engström, O.

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Designing interactions by control of protein-ligand complex conformation: tuning arginine-arene interaction geometry for enhanced electrostatic protein-ligand interactions von Noresson, A-L, Aurelius, O, Öberg, C T, Engström, O, Sundin, A P, Håkansson, M, Stenström, O, Akke, M, Logan, D T, Leffler, H, Nilsson, U J

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Navigation aids in the search for future high- k dielectrics: Physical and electrical trends von Engström, O., Raeissi, B., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K.

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Multiparameter admittance spectroscopy for metal-oxide-semiconductor systems von Piscator, J., Raeissi, B., Engström, O.

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The three-dimensional structures of antagonistic and agonistic forms of the glucocorticoid receptor ligand-binding domain: RU-486 induces a transconformation that leads to active a... von Kauppi, Björn, Jakob, Clarissa, Färnegårdh, Mathias, Yang, Jie, Ahola, Harri, Alarcon, Maria, Calles, Karin, Engström, Owe, Harlan, John, Muchmore, Steven, Ramqvist, Anna-Karin, Thorell, Susanne, Ohman, Lars, Greer, Jonathan, Gustafsson, Jan-Ake, Carlstedt-Duke, Jan, Carlquist, Mats

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Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy von Kaniewska, M., Engström, O., Kaczmarczyk, M.

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Structure of the ligand-binding domain of oestrogen receptor beta in the presence of a partial agonist and a full antagonist von Pike, Ashley C. W., Brzozowski, Andrzej M., Hubbard, Roderick E., Bonn, Tomas, Thorsell, Ann-Gerd, Engström, Owe, Ljunggren, Jan, Gustafsson, Jan-Åke, Carlquist, Mats

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Electron States in MOS Systems von Engström, Olof

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Charge carrier traffic at self-assembled Ge quantum dots on Si von Kaniewska, M., Engström, O., Karmous, A., Oehme, M., Petersson, G., Kasper, E.

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Deep Level Transient Spectroscopy in Quantum Dot Characterization von Engström, O, Kaniewska, M

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The conductance method in a bottom-up approach applied on hafnium oxide/silicon interfaces von Piscator, J., Raeissi, B., Engström, O.

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Schottky barriers on silicon nanowires influenced by charge configuration von Piscator, J., Engström, O.

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Electron tunneling from quantum dots characterized by deep level transient spectroscopy von Engström, O., Kaniewska, M., Kaczmarczyk, M., Jung, W.

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Vibronic nature of hafnium oxide/silicon interface states investigated by capacitance frequency spectroscopy von Engström, O., Raeissi, B., Piscator, J.

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Schottky barrier modulation on silicon nanowires von Piscator, J., Engström, O.

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Confined energy states in quantum dots detected by a resonant differential capacitance method von Engström, O., Kaniewska, M., Kaczmarczyk, M.

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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy von Raeissi, B., Piscator, J., Engström, O., Hall, S., Buiu, O., Lemme, M.C., Gottlob, H.D.B., Hurley, P.K., Cherkaoui, K., Osten, H.J.

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Three dimensional mapping of thermal and tunneling electron emission from InAs∕GaAs quantum dots von Engström, O., Kaniewska, M., Jung, W., Kaczmarczyk, M.

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A new mechanism for modulation of Schottky barrier heights on silicon nanowires von Piscator, J., Engström, O.

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Leakage current effects on C - V plots of high- k metal-oxide-semiconductor capacitors von Lu, Y., Hall, S., Tan, L. Z., Mitrovic, I. Z., Davey, W. M., Raeissi, B., Engström, O., Cherkaoui, K., Monaghan, S., Hurley, P. K., Gottlob, H. D. B., Lemme, M. C.

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