Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory von Jiang, Zhouhang, Guo, Zixiang, Luo, Xuyi, Sayed, Munazza, Faris, Zubair, Mulaosmanovic, Halid, Duenkel, Stefan, Soss, Steven, Beyer, Sven, Gong, Xiao, Kurinec, Santosh, Narayanan, Vijaykrishnan, Amrouch, Hussam, Xia Zhang, En, Fleetwood, Daniel M., Schrimpf, Ronald D., Ni, Kai

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Radiation Effects in AlGaN/GaN HEMTs von Fleetwood, Daniel M., Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.

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Low-Frequency Noise Due to Iron Impurity Centers in GaN-Based HEMTs von Fleetwood, Daniel M., Li, Xun, Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T.

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Aging Effects and Latent Interface-Trap Buildup in MOS Transistors von Ding, Jiarui, Zhang, En Xia, Li, Kan, Luo, Xuyi, Gorchichko, Mariia, Fleetwood, Daniel M.

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Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses von Faccio, Federico, Borghello, Giulio, Lerario, Edoardo, Fleetwood, Daniel M., Schrimpf, Ronald D., Huiqi Gong, En Xia Zhang, Wang, P., Michelis, Stefano, Gerardin, Simone, Paccagnella, Alessandro, Bonaldo, Stefano

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Effects of Interface Traps and Hydrogen on the Low-Frequency Noise of Irradiated MOS Devices von Fleetwood, Daniel M., Zhang, En Xia, Schrimpf, Ronald D., Pantelides, Sokrates T., Bonaldo, Stefano

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Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs von Bonaldo, Stefano, Zhang, En Xia, Mattiazzo, Serena, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Fleetwood, Daniel M.

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Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors von Bhuiyan, Maruf A., Zhou, Hong, Jiang, Rong, Zhang, En Xia, Fleetwood, Daniel M., Ye, Peide D., Ma, Tso-Ping

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Zwitterionic pH-responsive hyaluronic acid polymer micelles for delivery of doxorubicin von Gao, Qin-Qin, Zhang, Chuan-Min, Zhang, En-Xia, Chen, Hui-Ying, Zhen, Yu-Hong, Zhang, Shu-Biao, Zhang, Shu-Fen

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Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors von Gorchichko, Mariia, Zhang, En Xia, Wang, Pan, Bonaldo, Stefano, Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Mitard, Jerome, Fleetwood, Daniel M.

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Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations von Chen, Leilei, Jin, Ning, Yan, Dawei, Cao, Yanrong, Zhao, Linna, Liang, Hailian, Liu, Bin, Zhang, En Xia, Gu, Xiaofeng, Schrimpf, Ronald D., Fleetwood, Daniel M., Lu, Hai

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Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices With SiON Tunneling Oxide von Wynocker, Isabella R., Xia Zhang, En, Reed, Robert A., Schrimpf, Ronald D., Arreghini, Antonio, Bastos, Joao P., Van den Bosch, Geert, Linten, Dimitri, Fleetwood, Daniel M.

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Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs von Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy

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Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics von Gorchichko, Mariia, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, Liang, Chundong, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri

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TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses von Bonaldo, Stefano, Gorchichko, Mariia, Zhang, En Xia, Ma, Teng, Mattiazzo, Serena, Bagatin, Marta, Paccagnella, Alessandro, Gerardin, Simone, Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri, Mitard, Jerome, Fleetwood, Daniel M.

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Supply Voltage Dependence of Ring Oscillator Frequencies for Total Ionizing Dose Exposures for 7-nm Bulk FinFET Technology von Xiong, Yoni, Feeley, Alexandra T., Wang, Peng Fei, Li, Xun, Zhang, En Xia, Massengill, Lloyd W., Bhuva, Bharat L.

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Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors von Guo, Zixiang, Li, Kan, Li, Xun, Luo, Xuyi, Zhang, En Xia, Reed, Robert A., Schrimpf, Ronald D., Fleetwood, Daniel M., Chasin, A., Mitard, J., Linten, D.

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Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers von Guo, Zixiang, Zhang, En Xia, Chasin, A., Linten, D., Belmonte, A., Kar, G., Reed, Robert A., Schrimpf, Ronald D., Fleetwood, Daniel M.

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Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics von Bonaldo, Stefano, Putcha, Vamsi, Linten, Dimitri, Pantelides, Sokrates T., Reed, Robert A., Schrimpf, Ronald D., Fleetwood, Daniel M., Zhao, Simeng E., O'Hara, Andrew, Gorchichko, Mariia, Zhang, En Xia, Gerardin, Simone, Paccagnella, Alessandro, Waldron, Niamh, Collaert, Nadine

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Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions von Luo, Xuyi, Montes, Jossue, Koukourinkova, Sabina D., Vaandrager, Bastiaan L., Bielejec, Edward S., Vizkelethy, Gyorgy, Schrimpf, Ronald D., Fleetwood, Daniel M., Zhang, En Xia

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