SiC MPS Devices: One Step Closer to the Ideal Diode von Rupp, Roland, Schörner, Reinhold, Elpelt, Rudolf, Gerlach, Rolf, Draghici, Mihai

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Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET von Elpelt, Rudolf, Zippelius, Bernd, Domes, Daniel

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Application-Oriented Unipolar Switching SiC Devices von Stephani, Dietrich, Schörner, Reinhold, Elpelt, Rudolf, Mitlehner, Heinz, Friedrichs, Peter, Dohnke, Karl Otto

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Employing Scanning Spreading Resistance Microscopy (SSRM) for improving TCAD simulation accuracy of silicon carbide von Elpelt, R., Zippelius, B., Doering, S., Winkler, U.

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Optimization of Vertical Silicon Carbide Field Effect Transistors towards a Cost Attractive SiC Power Switch von Stephani, Dietrich, Elpelt, Rudolf, Schörner, Reinhold, Mitlehner, Heinz, Friedrichs, Peter

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE von Elpelt, Rudolf, Hell, Michael

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High Voltage SiC Vertical JFET for High Power RF Applications von Schörner, Reinhold, Heid, Oliver, Elpelt, Rudolf, Irsigler, Roland, Hecht, Christian

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Fast Switching with SiC VJFETs - Influence of the Device Topology von Biela, Jürgen, Friedrichs, Peter, Elpelt, Rudolf

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Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement von Hilsenbeck, Jochen, Rupp, Roland, Elpelt, Rudolf, Peters, Dethard, Treu, Michael

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SiC devices with shielding structure von Elpelt, Rudolf, Hell, Michael, Leendertz, Caspar

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SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch von Rueschenschmidt, Kathrin, Treu, Michael, Blaschitz, Peter, Rupp, Roland, Elpelt, Rudolf, Peters, Dethard, Friedrichs, Peter

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Power transistor with integrated Schottky diode von Elpelt, Rudolf, Hell, Michael, Leendertz, Caspar

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Silicon carbide device with trench gate structure and method of manufacturing von Elpelt, Rudolf, Mauder, Anton, Siemieniec, Ralf

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A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications von Tai, Chee Siew, Treu, Michael, Blaschitz, Peter, Rupp, Roland, Hilsenbeck, Jochen, Reimann, T., Brunner, Helmut, Elpelt, Rudolf, Peters, Dethard

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Semiconductor device including current spread region von Elpelt, Rudolf, Ganner, Thomas, Hell, Michael, Leendertz, Caspar

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Electro-Thermal SPICE Model for High-Voltage SiC VJFETs von Türkes, Peter, Elpelt, Rudolf, Schörner, Reinhold, Hippeli, J., Friedrichs, Peter, Treu, Michael

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Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor Device von Elpelt, Rudolf, Hell, Michael, Willmeroth, Armin, Leendertz, Caspar, Hille, Frank

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Layout considerations for improving the on-state performance of vertical SiC switching devices von Friedrichs, P., Elpelt, R.

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Silicon carbide semiconductor component von Elpelt, Rudolf, Basler, Thomas, Schulze, Hans-Joachim

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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE von Elpelt, Rudolf, Peters, Dethard, Hell, Michael, Zippelius, Bernd, Leendertz, Caspar

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