Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation von Alathbah, Moath, Elgaid, Khaled

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GaN-on-diamond technology platform: Bonding-free membrane manufacturing process von Smith, Matthew D., Cuenca, Jerome A., Field, Daniel E., Fu, Yen-chun, Yuan, Chao, Massabuau, Fabien, Mandal, Soumen, Pomeroy, James W., Oliver, Rachel A., Uren, Michael J., Elgaid, Khaled, Williams, Oliver A., Thayne, Iain, Kuball, Martin

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Low-Hydrogen-Content Silicon Nitride Deposited at Room Temperature by Inductively Coupled Plasma Deposition von Zhou, Haiping, Elgaid, Khaled, Wilkinson, Chris, Thayne, Iain

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50-nm Self-Aligned and "Standard" T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node von Moran, David A. J., McLelland, Helen, Elgaid, Khaled, Whyte, Griogair, Stanley, Colin R., Thayne, Iain

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Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit von Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

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Open-Gated GaN HEMT-Based pH Detectors Using Patterned Sensing Area von Varghese, Arathy, Eblabla, Abdalla, Elgaid, Khaled

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Recent development and futuristic applications of MEMS based piezoelectric microphones von Kumar, Ashish, Varghese, Arathy, Sharma, Anup, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P., Elgaid, Khaled

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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon von Benakaprasad, Bhavana, Eblabla, Abdalla M., Li, Xu, Crawford, Kevin G., Elgaid, Khaled

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GaN-HEMT on Si as a Robust Visible-blind UV detector with High Responsivity von Varghese, Arathy, Eblabla, Abdalla, Wu, Zehao, Ghozati, Seyed Urman, Elgaid, Khaled

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Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology von Chandrasekar, Hareesh, Uren, Michael J., Casbon, Michael A., Hirshy, Hassan, Eblabla, Abdalla, Elgaid, Khaled, Pomeroy, James W., Tasker, Paul J., Kuball, Martin

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Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates von Chandrasekar, Hareesh, Uren, Michael J., Eblabla, Abdalla, Hirshy, Hassan, Casbon, Michael A., Tasker, Paul J., Elgaid, Khaled, Kuball, Martin

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Optimization and fabrication of MEMS based piezoelectric acoustic sensor for wide frequency range and high SPL acoustic application von Kumar, Ashish, Varghese, Arathy, Sharma, Girraj, Kumar, Manish, K Sharma, Gaurav, Prasad, Mahanth, Janyani, Vijay, Yadav, R.P., Elgaid, Khaled

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GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology von Eblabla, Abdalla Mohamed, Xu Li, Wallis, David J., Guiney, Ivor, Elgaid, Khaled

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System Level Modeling of a Digital Communication Channel Based on SystemC von Aref, Ibrahim, Elgaid, Khaled

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An Approximate Analytical Model for the Quasi-Static Parameters of Elevated CPW Lines von McGregor, I, Aghamoradi, F, Elgaid, K

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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon von Ghosh, Saptarsi, Hinz, Alexander, Fairclough, Simon M, Spiridon, Bogdan F, Eblabla, Abdalla, Casbon, Michael A, Kappers, Menno J, Elgaid, Khaled, Alam, Saiful, Oliver, Rachel A, Wallis, David J

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An Ultra-Low-Power MMIC Amplifier Using 50-nm δ-Doped In0.52Al0.48As/In0.53Ga0.47As Metamorphic HEMT von HWANG, Chi-Jeon, LAI BUN LOK, CHONG, Harold M. H, HOLLAND, Martin, THAYNE, Lain G, ELGAID, Khaled

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An Ultra-Low-Power MMIC Amplifier Using 50-nm [Formula Omitted]-Doped [Formula Omitted] Metamorphic HEMT von Hwang, Chi-Jeon, Lok, Lai Bun, Chong, Harold M. H, Holland, Martin, Thayne, Iain G, Elgaid, Khaled

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An Ultra-Low-Power MMIC Amplifier Using 50-nm d -Doped hbox In 0.52 hbox Al 0.48 hbox As / In 0.53 hbox Ga 0.47 hbox As Metamorphic HEMT von Hwang, Chi-Jeon, Lok, Lai Bun, Chong, Harold MH, Holland, Martin, Thayne, Iain G, Elgaid, Khaled

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LOW-LOSS GROUNDED ELEVATED COPLANARWAVEGUIDE FOR SUB-MILLIMETERWAVE MMIC APPLICATIONS von Aghamoradi, Fatemeh, McGregor, Ian, Roy, Scott, Elgaid, Khaled

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