High-power and frequency-stable ultraviolet laser performance in space for the wind lidar on Aeolus von Lux, Oliver, Wernham, Denny, Bravetti, Paolo, McGoldrick, Phil, Lecrenier, Olivier, Riede, Wolfgang, D'Ottavi, Alessandro, De Sanctis, Valeria, Schillinger, Marc, Lochard, Jérémie, Marshall, Jon, Lemmerz, Christian, Weiler, Fabian, Mondin, Linda, Ciapponi, Alessandra, Kanitz, Thomas, Elfving, Anders, Parrinello, Tommaso, Reitebuch, Oliver

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ESA’s spaceborne lidar mission ADM-Aeolus; project status and preparations for launch von Straume, Anne Grete, Elfving, Anders, Wernham, Denny, de Bruin, Frank, Kanitz, Thomas, Schuettemeyer, Dirk, Bismarck, Jonas von, Buscaglione, Fabio, Lecrenier, O., McGoldrick, Phil

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ESA’s Spaceborne Lidar Mission ADM-Aeolus; Recent Achievements and Preparations for Launch von Straume, Anne Grete, Elfving, Anders, Wernham, Denny, Culoma, Alain, Mondin, Linda, de Bruin, Frank, Kanitz, Thomas, Schuettemeyer, Dirk, Buscaglione, Fabio, Dehn, Angelika

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Growth-temperature-dependent band alignment in Si ∕ Ge quantum dots from photoluminescence spectroscopy von Larsson, M., Elfving, A., Ni, W.-X., Hansson, G. V., Holtz, P. O.

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Asymmetric relaxation of SiGe∕Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping von Elfving, A., Zhao, M., Hansson, G. V., Ni, W.-X.

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Spatially direct and indirect transitions observed for Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P. O., Hansson, G. V., Ni, W.-X.

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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection von Elfving, A., Karim, A., Hansson, G. V., Ni, W.-X.

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Type-I optical emissions in GeSi quantum dots von Gomes, P.F., Iikawa, F., Cerdeira, F., Larsson, Mats, Elfving, Anders, Hansson, Göran, Ni, Wei-Xin, Holtz, Per-Olof

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Two rovers to the same site on Mars, 2018: possibilities for cooperative science von Grant, John A

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Near-infrared photodetectors based on Si/SiGe nanostructures von Elfving, Anders

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Gap control for die or layer bonding using intermediate layers of a micro-electromechanical system von Elfving, Anders, Kittilsland, Gjermund

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Photoluminescence study of Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P.O., Hansson, G.V., Ni, W.-X.

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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes von Hansson, G. V., Ni, W.-X., Du, C.-X., Elfving, A., Duteil, F.

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SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm von Elfving, Anders, Hansson, Göran V., Ni, Wei-Xin

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Luminescence study of Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P.-O., Hansson, G.V., Ni, W.-X.

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Gap control for die or layer bonding using intermediate layers von KITTILSLAND GJERMUND, ELFVING ANDERS

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Surface diffusion limited nucleation of Ge dots on the Si(001) surface von Wu, Y.-H, Wang, C.-Y, Elfving, A, Hansson, G.V, Ni, W.-X

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Gap control for die or layer bonding using intermediate layers of a micro-electromechanical system von ELFVING, ANDERS, KITTILSLAND, GJERMUND

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Gap control for die or layer bonding using intermediate layers von KITTILSLAND GJERMUND, ELFVING ANDERS

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Au-sn SLID bonding: Fluxless bonding with high temperature stability to above 350 °c von Aasmundtveit, K.E., Wang, K., Hoivik, N., Graff, J.M., Elfving, A.

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