A Review of Sharp-Switching Band-Modulation Devices von Cristoloveanu, Sorin, Lacord, Joris, Martinie, Sébastien, Navarro, Carlos, Gamiz, Francisco, Wan, Jing, Dirani, Hassan El, Lee, Kyunghwa, Zaslavsky, Alexander

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Sharp Logic Switch Based on Band Modulation von Lee, Kyung Hwa, El Dirani, Hassan, Fonteneau, Pascal, Bawedin, Maryline, Cristoloveanu, Sorin

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM von Navarro, Carlos, Lacord, Joris, Singh Parihar, Mukta, Adamu-Lema, Fikru, Meng Duan, Rodriguez, Noel, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Cristoloveanu, Sorin, Gamiz, Francisco

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Sharp-switching band-modulation back-gated devices in advanced FDSOI technology von El Dirani, Hassan, Fonteneau, Pascal, Solaro, Yohann, Legrand, Charles-Alex, Marin-Cudraz, David, Ferrari, Philippe, Cristoloveanu, Sorin

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A band-modulation device in advanced FDSOI technology: Sharp switching characteristics von El Dirani, Hassan, Solaro, Yohann, Fonteneau, Pascal, Legrand, Charles-Alex, Marin-Cudraz, David, Golanski, Dominique, Ferrari, Philippe, Cristoloveanu, Sorin

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Experimental Demonstration of Operational Z2-FET Memory Matrix von Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, El Dirani, Hassan, Galy, Philippe, Bawedin, Maryline, Pickering, Andy, Cristoloveanu, Sorin, Gamiz, Francisco

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Experimental Demonstration of Operational Z 2 -FET Memory Matrix von Navarro, Santiago, Navarro, Carlos, Marquez, Carlos, El Dirani, Hassan, Galy, Philippe, Bawedin, Maryline, Pickering, Andy, Cristoloveanu, Sorin, Gamiz, Francisco

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Insight into carrier lifetime impact on band-modulation devices von Parihar, Mukta Singh, Lee, Kyung Hwa, Park, Hyung Jin, Lacord, Joris, Martinie, Sébastien, Barbé, Jean-Charles, Xu, Yue, El Dirani, Hassan, Taur, Yuan, Cristoloveanu, Sorin, Bawedin, Maryline

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Properties and mechanisms of Z2-FET at variable temperature von Dirani, Hassan El, Solaro, Yohann, Fonteneau, Pascal, Ferrari, Philippe, Cristoloveanu, Sorin

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Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Duan, Meng, Parihar, Mukta Singh, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Lee, Kyunghwa, Sampedro, Carlos, Cheng, Binjie, El Dirani, Hassan, Barbé, Jean-Charles, Fonteneau, Pascal, Kim, Seong-Il, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Kim, Yong-Tae, Asenov, Asen, Gamiz, Francisco

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FET as Capacitor-Less eDRAM Cell For High-Density Integration von Navarro, Carlos, Meng Duan, Singh Parihar, Mukta, Adamu-Lema, Fikru, Coseman, Stefan, Lacord, Joris, Kyunghwa Lee, Sampedro, Carlos, Binjie Cheng, El Dirani, Hassan, Barbe, Jean-Charles, Fonteneau, Pascal, Seong-Il Kim, Cristoloveanu, Sorin, Bawedin, Maryline, Millar, Campbell, Galy, Philippe, Le Royer, Cyrille, Karg, Siegfried, Riel, Heike, Wells, Paul, Yong-Tae Kim, Asenov, Asen, Gamiz, Francisco

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Étude détaillée des dispositifs à modulation de bandes dans les technologies 14 nm et 28 nm FDSOI von El dirani, Hassan

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Inverting circuit von Fonteneau, Pascal, El Dirani, Hassan

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Z2-FET STRUCTURE von Fonteneau, Pascal, El Dirani, Hassan

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INVERTING CIRCUIT von Fonteneau, Pascal, El Dirani, Hassan

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Memory array comprising memory cells of Z2-FET type von Bedecarrats, Thomas, El Dirani, Hassan, Galy, Philippe

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Memory cell von Solaro, Yohann, Fonteneau, Pascal, El Dirani, Hassan

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MEMORY CELL von Solaro, Yohann, Fonteneau, Pascal, El Dirani, Hassan

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MEMORY CELL von Fonteneau Pascal, El Dirani Hassan, Solaro Yohann

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Memory cell von Fonteneau Pascal, El Dirani Hassan, Solaro Yohann

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