Unified retention model for localized charge trapping nonvolatile memory device von Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz

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Traps spectroscopy of the Si3Ni4 layer using localized charge-trapping nonvolatile memory device von Lusky, Eli, Shacham-Diamand, Yosi, Shappir, Assaf, Bloom, Ilan, Eitan, Boaz

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UV surface disinfection in a wearable drug delivery device von Zrehen, Adam, Hili, Uri, Weil, Noam, Ben-David, Ori, Yosef, Andrei, Eitan, Boaz

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Spatial characterization of localized charge trapping and charge redistribution in the NROM device von Shappir, Assaf, Levy, David, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz

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Lateral charge transport in the nitride layer of the NROM non-volatile memory device von Shappir, Assaf, Shacham-Diamand, Yosi, Lusky, Eli, Bloom, Ilan, Eitan, Boaz

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NROM: A novel localized trapping, 2-bit nonvolatile memory cell von Eitan, B., Pavan, P., Bloom, I., Aloni, E., Frommer, A., Finzi, D.

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NROMTM––a new technology for non-volatile memory products von Bloom, Ilan, Pavan, Paolo, Eitan, Boaz

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Fast test for medical pump von Eitan, Boaz

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FAST TEST FOR MEDICAL PUMP von EITAN, Boaz

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FAST TEST FOR MEDICAL PUMP von EITAN, Boaz

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FAST TEST FOR MEDICAL PUMP von EITAN, Boaz

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Characterization of channel hot electron injection by the subthreshold slope of NROM[trademark] device von Lusky, E, Shacham-Diamand, Y, Bloom, I, Eitan, B

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Electrons retention model for localized charge in oxide-nitride-oxide (ONO) dielectric von Lusky, E., Shacham-Diamand, Y., Bloom, I., Eitan, B.

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Investigation of channel hot electron injection by localized charge-trapping nonvolatile memory devices von Lusky, E., Shacham-Diamand, Y., Mitenberg, G., Shappir, A., Bloom, I., Eitan, B.

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Interface states formation in a localized charge trapping nonvolatile memory device von Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz

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On the physical mechanism of the NROM memory erase von Larcher, L., Pavan, P., Eitan, B.

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Unified retention model for localized charge trapping nonvolatilememory device von Shapira, Asia, Shur, Yael, Shacham-Diamand, Yosi, Shappir, Assaf, Eitan, Boaz

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Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells von Larcher, L., Verzellesi, G., Pavan, P., Lusky, E., Bloom, I., Eitan, B.

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Prueba rápida para bomba médica von EITAN, Boaz

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IN CYCLE PRESSURE MEASUREMENT von RASOWSKY, Amir, MIZRAHI, David, EITAN, Boaz

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