Properties of ultrathin films appropriate for optics capping layers exposed to high energy photon irradiation von Bajt, Saša, Edwards, N.V., Madey, Theodore E.

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Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2 von TRIYOSO, D, LIU, R, WANG, X.-D, LA, L. B, HOBBS, C, GARCIA, R, BAKER, J, WHITE, B. E, TOBIN, P, ROAN, D, RAMON, M, EDWARDS, N. V, GREGORY, R, WERHO, D, KULIK, J, TAM, G, IRWIN, E

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Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography von Madey, Theodore E., Faradzhev, Nadir S., Yakshinskiy, Boris V., Edwards, N.V.

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Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition von THOMAS, Shawn G, BHARATAN, Sushil, RAMM, Juergen, ISELLA, Giovanni, VON KÄNEL, Hans, JONES, Robert E, THOMA, Rainer, ZIRKLE, Thomas, EDWARDS, N. V, RAN LIU, XIANG DONG WANG, QIANGHUA XIE, ROSENBLAD, Carsten

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HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium von SCHAEFFER, J, EDWARDS, N. V, ZOLLNER, S, TOBIN, P, NGUYEN, B.-Y, NIEH, R, RAMON, M, RAO, R, HEGDE, R, RAI, R, BAKER, J, VOIGHT, S, LIU, R, ROAN, D, HRADSKY, B, GREGORY, R, KULIK, J, DUDA, E, CONTRERAS, L, CHRISTIANSEN, J

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Optical properties of SiC investigated by spectroscopic ellipsometry from 3.5 to 10 eV von COBET, C, WILMERS, K, WETHKAMP, T, EDWARDS, N. V, ESSER, N, RICHTER, W

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Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry von Edwards, N. V., Bremser, M. D., Weeks, T. W., Kern, R. S., Davis, R. F., Aspnes, D. E.

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Optical characterization of wide bandgap semiconductors von EDWARDS, N. V, BREMSER, M. D, DAVIS, R. F, ASPNES, D. E, MONEMAR, B, BATCHELOR, A. D, BUYANOVA, I. A, MADSEN, L. D, YOO, S. D, WETHKAMP, T, WILMERS, K, COBET, C, ESSER, N

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Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition von Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., Davis, R. F.

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Stress-induced anisotropy of graphitelike amorphous carbon von Zollner, Stefan, Qin, Wentao, Gregory, Richard B., Edwards, N. V., Junker, Kurt, Tiwald, Thomas E.

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Real-time assessment of selected surface preparation regimens for 4H–SiC surfaces using spectroscopic ellipsometry von Edwards, N.V., Järrendahl, K., Aspnes, D.E., Robbie, K., Powell, G.D., Cobet, C., Esser, N., Richter, W., Madsen, L.D.

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Birefringence and VIS/VUV optical absorption of graphite-like amorphous carbon von Zollner, Stefan, Qin, Wentao, Gregory, R B, Kulik, J, Edwards, N V, Junker, Kurt, Tiwald, T E

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Analysis of optical spectra by Fourier methods von Yoo, S.D., Edwards, N.V., Aspnes, D.E.

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Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films von Edwards, N.V, Yoo, S.D, Bremser, M.D, Horton, M.N, Perkins, N.R, Weeks, T.W, Liu, H, Stall, R.A, Kuech, T.F, Davis, R.F, Aspnes, D.E

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The electric field dependence of single electron emission in the PIXeY two-phase xenon detector von Bodnia, E., Bernard, E.P., Biekert, A., Boulton, E.M., Cahn, S.B., Destefano, N., Edwards, B.N.V., Gai, M., Horn, M., Larsen, N.A., Riffard, Q., Tennyson, B., Velan, V., Wahl, C., McKinsey, D.N.

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Status and Prospects For VUV Ellipsometry (Applied to High K and Low K Materials) von Edwards, N V

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Extraction efficiency of drifting electrons in a two-phase xenon time projection chamber von Edwards, B.N.V., Bernard, E., Boulton, E.M., Destefano, N., Gai, M., Horn, M., Larsen, N., Tennyson, B., Tvrznikova, L., Wahl, C., McKinsey, D.N.

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Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films von Edwards, N.V, Yoo, S.D, Bremser, M.D, Zheleva, Ts, Horton, M.N, Perkins, N.R, Weeks Jr, T.W, Liu, H, Stall, R.A, Kuech, T.F, Davis, R.F, Aspnes, D.E

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Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV von Lindquist, O. P. A., Järrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., Aspnes, D. E., Henry, A., Edwards, N. V.

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Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2] von Triyoso, D., Liu, R., Roan, D., Ramon, M., Edwards, N. V., Gregory, R., Werho, D., Kulik, J., Tam, G., Irwin, E., Wang, X.-D., La, L. B., Hobbs, C., Garcia, R., Baker, J., White, B. E., Tobin, P.

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