Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations von Connors, Elliot J., Nelson, J., Edge, Lisa F., Nichol, John M.

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Coherent spin–valley oscillations in silicon von Cai, Xinxin, Connors, Elliot J., Edge, Lisa F., Nichol, John M.

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Low-frequency charge noise in Si/SiGe quantum dots von Connors, Elliot J., Nelson, JJ, Qiao, Haifeng, Edge, Lisa F., Nichol, John M.

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Metamorphic materials for quantum computing von Deelman, Peter W., Edge, Lisa F., Jackson, Clayton A.

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Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography von Dyck, Ondrej, Leonard, Donovan N., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W., Poplawsky, Jonathan D.

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Two-axis quantum control of a fast valley qubit in silicon von Penthorn, Nicholas E., Schoenfield, Joshua S., Rooney, John D., Edge, Lisa F., Jiang, HongWen

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Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films von Zafar, Sufi, Jagannathan, Hemanth, Edge, Lisa F., Gupta, Devendra

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Erratum: Low-frequency charge noise in Si/SiGe quantum dots [Phys. Rev. B 100 , 165305 (2019)] von Connors, Elliot J., Nelson, JJ, Qiao, Haifeng, Edge, Lisa F., Nichol, John M.

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Considerations and Challenges with Characterizing Si/SiGe Interfaces von Dyck, Ondrej, Leonard, Donovan, Poplawsky, Jonathan, Pritchett, Emily, Kiselev, Andrey A., Jackson, Clayton A., Edge, Lisa F.

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Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs von Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam

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Characterization of Inversion-Layer Capacitance of Electrons in High- k/Metal Gate Stacks von Iijima, R, Edge, L F, Paruchuri, V, Takayanagi, M

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Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017) von Dyck, Ondrej, Leonard, Donovan N., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W., Poplawsky, Jonathan D.

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Quantification of Atomic Arrangements at Heterostructure Interfaces von Leonard, Donovan N., Dyck, Ondrej, Poplawsky, Jonathan D., More, Karren L., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W.

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Gate Capacitance Reduction Due to the Inversion Layer in High- k/Metal Gate Stacks Within a Subnanometer EOT Regime von Iijima, R, Edge, L F, Ariyoshi, K, Bruley, J, Paruchuri, V, Takayanagi, M

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Electron Mobility Limited by Remote Charge Scattering in Thin (100)- and (110)-Oriented Silicon Body Double-Gated Metal--Oxide--Semiconductor Field-Effect Transistors with High-$k$... von Iijima, Ryosuke, Edge, Lisa F, Paruchuri, Vamsi, Takayanagi, Mariko

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-$k$/Metal Gate Metal--Oxide--Semiconductor Field-Effec... von Iijima, Ryosuke, Edge, Lisa F, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko

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Characteristics of La2O3- and Al2O3-Capped HfO2 Dielectric Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on (110)-Oriented Silicon Substrates von Iijima, Ryosuke, Edge, Lisa F, Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko

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Direct Measurement of Electron Intervalley Relaxation in a Si / Si - Ge Quantum Dot von Penthorn, Nicholas E., Schoenfield, Joshua S., Edge, Lisa F., Jiang, HongWen

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High-resolution x-ray reflection Fourier analysis of metamorphic Si/SiGe quantum wells von Richardson, Christopher J. K., Jackson, Clayton A., Edge, Lisa F., Deelman, Peter W.

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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High- k /Metal Gate Metal–Oxide–Semiconductor Field-Effect... von Iijima, Ryosuke, Edge, Lisa F., Bruley, John, Paruchuri, Vamsi, Takayanagi, Mariko

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