GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept von Nakajima, Akira, Sumida, Yasunobu, Dhyani, Mahesh H, Kawai, Hiroji, Narayanan, E M Sankara

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The 2018 GaN power electronics roadmap von Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M, Reddy, R, Sun, Min, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao

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Characteristics of a 1200 V Hybrid Power Switch Comprising a Si IGBT and a SiC MOSFET von Sheikhan, Alireza, Narayanan, E M Sankara

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IoT based heart disease prediction using smote and machine learning techniques von Narayanan, E., Jayashree, R.

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Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability von Sheikhan, Alireza, Narayanankutty, Gopika, Narayanan, E. M. Sankara, Kawai, Hiroji, Yagi, Shuichi, Narui, Hironobu

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A Novel Approach to Suppress the Collector-Induced Barrier Lowering Effect in Narrow Mesa IGBTs von Luo, Peng, Long, Hong Yao, Narayanan, E. M. S.

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Low cost high voltage GaN polarization superjunction field effect transistors von Kawai, H., Yagi, S., Hirata, S., Nakamura, F., Saito, T., Kamiyama, Y., Yamamoto, M., Amano, H., Unni, V., Narayanan, E. M. S.

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A low temperature combination method for the production of ZnO nanowires von Cross, R B M, Souza, M M De, Sankara Narayanan, E M

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An ultra‐fast protection scheme for normally‐on wide bandgap devices von Tan, Qiuyang, Narayanankutty, Gopika, Narayanan, E. M. Sankara

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Injectivity of Spherical Means on H-Type Groups von Narayanan, E. K., Sanjay, P. K., Yasser, K. T.

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Evaluation of gate drive circuit effect in cascode GaN-based applications von Tan, Q. Y., Narayanan, E. M. S.

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Erratum: Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability [Jpn. J. Appl. Phys. 62 014501 (2023)] von Sheikhan, Alireza, Narayanankutty, Gopika, Narayanan, E. M. Sankara, Kawai, Hiroji, Yagi, Shuichi, Narui, Hironobu

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Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis von Unni, Vineet, Narayanan, E. M. Sankara

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Spherical means with centers on a hyperplane in even dimensions von Narayanan, E K, Rakesh

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Comparison of PRISM III and PIM II Score in Predicting Mortality in Paediatric Intensive Care Unit: An Observational Study von Muthupandi, V, Dianagrace, R, Narayanan, E, Sathya, J

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The world’s first high voltage GaN-on-Diamond power semiconductor devices von Baltynov, Turar, Unni, Vineet, Narayanan, E.M. Sankara

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Crosstalk in monolithic GaN-on-Silicon power electronic devices von Unni, V., Kawai, H., Narayanan, E.M.S.

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High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface von Nakajima, Akira, Sumida, Yasunobu, Dhyani, Mahesh H, Kawai, Hiroji, Narayanan, E. M. Sankara

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Performance Evaluation of 10-kV SiC Trench Clustered IGBT von Menon, K. G., Nakajima, A., Ngwendson, L., Narayanan, E. M. Sankara

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Characterization of poly methyl methaacrylate and reduced graphene oxide composite for application as electrolyte in dye sensitized solar cells von Shrivatsav, Roshan, Mahalingam, Vignesh, Narayanan, E R Lakshmi, Balaji, N Naveen, Balu, Murali, Prasad, R Krishna, Kumaresan, Duraisamy

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