Generation of High-Power Ultrashort Optical Pulses Using a Semiconductor Laser with Controlled Current Pumping von Kolykhalova, E. D., Dyudelev, V. V., Zazulin, S. V., Losev, S. N., Deryagin, A. G., Kuchinskii, V. I., Efanov, M. V., Sokolovskii, G. S.

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InGaAs/AlInAs/InP Quantum-Cascade Lasers with Reflective and Antireflective Optical Coatings von Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Kuznetsov, E. V., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Kognovitskaya, E. A., Losev, S. N., Abdulrazak, S. Kh, Babichev, A. V., Savchenko, G. M., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinsky, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

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Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers von Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Kuznetsov, E. V., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Kognovitskaya, E. A., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinsky, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

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Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers von Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Savchenko, G. M., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinskii, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

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Lasing in 9.6-μm Quantum Cascade Lasers von Babichev, A. V., Gusev, G. A., Sofronov, A. N., Firsov, D. A., Vorob’ev, L. E., Usikova, A. A., Zadiranov, Yu. M., Il’inskaya, N. D., Nevedomskii, V. N., Dyudelev, V. V., Sokolovskii, G. S., Gladyshev, A. G., Karachinsky, L. Ya, Novikov, I. I., Egorov, A. Yu

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High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm) von Vinokurov, D. A., Deryagin, A. G., Dyudelev, V. V., Kuchinskiĭ, V. I., Lyutetskiĭ, A. V., Pikhtin, N. A., Sokolovskiĭ, G. S., Stankevich, A. L., Tarasov, I. S.

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Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range von Andreev, I. A., Serebrennikova, O. Yu, Sokolovskii, G. S., Kunitsyna, E. V., Dyudelev, V. V., Gadzhiev, I. M., Deryagin, A. G., Grebenshchikova, E. A., Konovalov, G. G., Mikhailova, M. P., Il’inskaya, N. D., Kuchinskii, V. I., Yakovlev, Yu. P.

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Lasing in 9.6-[mu]m Quantum Cascade Lasers von Babichev, A. V, Gusev, G. A, Sofronov, A. N, Firsov, D. A, Vorob'ev, L. E, Usikova, A. A, Zadiranov, Yu. M

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Influence of the axicon characteristics and beam propagation parameter M 2 on the formation of Bessel beams from semiconductor lasers von Sokolovskii, G S, Dyudelev, V V, Losev, S N, Butkus, M, Soboleva, K K, Sobolev, A I, Deryagin, A G, Kuchinskii, V I, Sibbet, V, Rafailov, E U

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Influence of the axicon characteristics and beam propagation parameter M{sup 2} on the formation of Bessel beams from semiconductor lasers von Sokolovskii, G S, Dyudelev, V V, Losev, S N, Butkus, M, Soboleva, K K, Sobolev, A I, Deryagin, A G, Kuchinskii, V I, Sibbet, V, Rafailov, E U

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VCSELs based on arrays of sub-monolayer InGaAs quantum dots von Blokhin, S. A., Maleev, N. A., Kuz’menkov, A. G., Shernyakov, Yu. M., Novikov, I. I., Gordeev, N. Yu, Dyudelev, V. V., Sokolovskiĭ, G. S., Kuchinskiĭ, V. I., Kulagina, M. M., Maximov, M. V., Ustinov, V. M., Kovsh, A. R., Mikhrin, S. S., Ledentsov, N. N.

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High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Andreev, A.D., Losev, S.N., Kognovitskaya, E.A., Bobretsova, Yu.K., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Development and study of high-power quantum-cascade lasers emitting at 4.5 - 4.6 μm von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Savchenko, G.M., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Generation of the second harmonic in ridge waveguides formed in periodically poled lithium niobate von Dudelev, V.V., Akhmatkhanov, A.R., Greshnyakov, E.D., Abdulrazak, S.Kh, Bugrov, V.E., Kognovitskaya, E.A., Kuchinskii, V.I., Shur, V.Ya, Sokolovskii, G.S.

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Bessel beams from semiconductor light sources von Sokolovskii, G.S., Dudelev, V.V., Losev, S.N., Soboleva, K.K., Deryagin, A.G., Fedorova, K.A., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U.

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Application of two-dimensional dynamic gain grating for generation of coherent radiation from spatially extended active media von Baryshev, V. R., Ginzburg, N. S.

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High-speed photodiodes for the mid-infrared spectral region 1.2-2.4 µm based on GaSb/GainAsSb/GaAlAsSb heterostructures with a transmission band of 2-5 GHz von Andreev, I.A, Serebrennikova, O. Yu, Sokolovskii, G.S, Dudelev, V.V, Ilynskaya, N.D, Konovalov, G.G, Kunitsyna, E.V, Yakovlev, Yu. P

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Influence of the axicon characteristics and beam propagation parameter on the formation of Bessel beams from semiconductor lasers von Sokolovskii, G.S., Dudelev, V.V., Losev, S.N., Butkus, M., Soboleva, K.K., Sobolev, A.I., Deryagin, A.G., Kuchinskii, V.I., Sibbett, W., Rafailov, E.U.

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Heterostructures of Quantum-Cascade Laser for the Spectral Range of 4.6 μm for Obtaining a Continuous-Wave Lasing Mode von Babichev, A. V., Gladyshev, A. G., Dudelev, V. V., Karachinsky, L. Ya, Novikov, I. I., Denisov, D. V., Slipchenko, S. O., Lyutetskii, A. V., Pikhtin, N. A., Sokolovskii, G. S., Egorov, A. Yu

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Room Temperature Lasing of Single-Mode Arched-Cavity Quantum-Cascade Lasers von Babichev, A. V., Gladyshev, A. G., Kurochkin, A. S., Dudelev, V. V., Kolodeznyi, E. S., Sokolovskii, G. S., Bugrov, V. E., Karachinsky, L. Ya, Novikov, I. I., Denisov, D. V., Ionov, A. S., Slipchenko, S. O., Lyutetskii, A. V., Pikhtin, N. A., Egorov, A. Yu

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