Boron-Related Defects in Low Temperature Irradiated Silicon von Sosnin, Mikhail, Duvanskii, A.V., Abrosimov, N.V., Riemann, Helge, Khirunenko, Ludmila

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Oxygen diffusion in Si1−xGex alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Duvanskii, A.V., Sobolev, N.A., Abrosimov, N.V., Riemann, H.

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Boron-Oxygen-Related Defect in Silicon von Khirunenko, Lyudmila I., Sosnin, Mikhail G., Duvanskii, A.V., Pomozov, Yurii V.

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Oxygen in Ge:Sn von Khirunenko, L. I., Pomozov, Yu. V., Sosnin, M. G., Duvanskii, A. V., Abrosimov, N. V., Riemann, H.

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Oxygen Diffusion in Si1-xGex Alloys von Khirunenko, Lyudmila I., Pomozov, Yu.V., Duvanskii, A.V., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V., Golyk, S.K.

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Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies von Khirunenko, Lyudmila I., Pomozov, Yu.V., Tripachko, N.A., Duvanskii, A.V., Lindström, J. Lennart, Peaker, Anthony R., Murin, L.I., Sosnin, Mikhail G., Lastovskii, Stanislav B., Makarenko, L.F., Markevich, Vladimir P.

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Divacancy-related complexes in Si (1− x )Ge ( x ) von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Trypachko, M.O., Duvanskii, A.V., Abrosimov, N.V., Riemann, H., Lastovskii, S.B., Murin, L.I., Markevich, V.P., Peaker, A.R.

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Interstitial Carbon-Related Defects in Si1-xGex Alloys von Khirunenko, Lyudmila I., Pomozov, Yu.V., Torres, Vitor, Duvanskii, A.V., Briddon, Patrick R., Jones, R., Coutinho, J., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V.

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