Correlation between electromigration and Cu-contact angle after de-wetting von Vanypre, T., Cordeau, M., Mourier, T., Besling, W.F.A., Dupuy, J-C., Torres, J.

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Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node von Chhun, S., Gosset, L.G., Michelon, J., Girault, V., Vitiello, J., Hopstaken, M., Courtas, S., Debauche, C., Bancken, P.H.L., Gaillard, N., Bryce, G., Juhel, M., Pinzelli, L., Guillan, J., Gras, R., Van Schravendijk, B., Dupuy, J.-C., Torres, J.

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Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects von Chhun, S., Gosset, L.G., Casanova, N., Ney, D., Delille, D., Trouiller, C., Hopstaken, M., Chausse, P., Grégoire, M., Gautier, B., Dupuy, J.-C., Torres, J.

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Deconvolution of very low primary energy SIMS depth profiles von Fares, B., Gautier, B., Dupuy, J.C., Prudon, G., Holliger, P.

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AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size von Fares, B., Dubois, C., Gautier, B., Dupuy, J.C., Cayrel, F., Gaudin, G.

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SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions von Holliger, P., Laugier, F., Dupuy, J. C.

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers von Marcenat, C., Kačmarčík, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Débarre, D.

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Deconvolution of SIMS depth profiles: Towards simple and faster techniques von Boulsina, F., Berrabah, M., Dupuy, J.C.

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon von Fares, B., Gautier, B., Baboux, N., Prudon, G., Holliger, P., Dupuy, J.C.

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SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam von Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Graf, J. P., Le Gall, Y., Muller, D.

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at von Dupuy, J. C., Prudon, G., Dubois, C., Kögler, R., Akhmadaliev, S., Perrat-Mabilon, A.

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Ultra-low energy SIMS analysis of boron deltas in silicon von Baboux, N, Dupuy, J.C, Prudon, G, Holliger, P, Laugier, F, Papon, A.M, Hartmann, J.M

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Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments von Laugier, F., Hartmann, J.M., Moriceau, H., Holliger, P., Truche, R., Dupuy, J.C.

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In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system von LeThanh, V, Calmes, C, Zheng, Y, Bouchier, D, Fortuna, V, Dupuy, J.-C

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Toward a better reliability in the deconvolution of SIMS depth profiles von Gautier, B., Prudon, G., Dupuy, J. C.

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Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys von Seck, M., Devine, R. A. B., Hernandez, C., Campidelli, Y., Dupuy, J.-C.

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Deconvolution of SIMS Depth Profiles of Boron in Silicon von Gautier, B., Prost, R., Prudon, G., Dupuy, J. C.

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Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon von Gautier, B., Dupuy, J. C., Prost, R., Prudon, G.

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Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon von Gautier, Brice, Fares, Boubker, Prudon, Gilles, Dupuy, Jean-Claude

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Electron mobility enhancement in a strained Si channel von Garchery, L., Sagnes, I., Warren, P., Dupuy, J.-C., Badoz, P.A.

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