History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes von Dupuis, R.D., Krames, M.R.

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Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction von Sun, Haiding, Park, Young Jae, Li, Kuang-Hui, Torres Castanedo, C. G., Alowayed, Abdulmohsen, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Using Copulas in Hydrology: Benefits, Cautions, and Issues von Dupuis, D. J

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Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-n Avalanche Photodiode von Jeong, H., Gazda, E. A., Ji, M.-H., Cho, M., Detchprohm, T., Shen, S.-C., Otte, A. N., Dupuis, R. D.

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Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates von Li, Xiao-Hang, Detchprohm, Theeradetch, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, P., Dupuis, Russell D., Wang, Shuo, Wei, Yong O., Xie, Hongen, Fischer, Alec M., Ponce, Fernando A., Wernicke, Tim, Reich, Christoph, Martens, Martin, Kneissl, Michael

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Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow von Wang, Shuo, Li, Xiaohang, Fischer, Alec M., Detchprohm, Theeradetch, Dupuis, Russell D., Ponce, Fernando A.

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Influence of TMAl preflow on AlN epitaxy on sapphire von Sun, Haiding, Wu, Feng, Park, Young Jae, Al tahtamouni, T. M., Li, Kuang-Hui, Alfaraj, Nasir, Detchprohm, Theeradetch, Dupuis, Russell D., Li, Xiaohang

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Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al0.5Ga0.5N Substrates von Wang, Xudong, Song, Jinhui, Li, Peng, Ryou, Jae Hyun, Dupuis, Russell D, Summers, Christopher J, Wang, Zhong L

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Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers von Choi, Suk, Ji, Mi-Hee, Kim, Jeomoh, Jin Kim, Hee, Satter, Md. M., Yoder, P. D., Ryou, Jae-Hyun, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors von Detchprohm, Theeradetch, Liu, Yuh-Shiuan, Mehta, Karan, Wang, Shuo, Xie, Hongen, Kao, Tsung-Ting, Shen, Shyh-Chiang, Yoder, Paul D., Ponce, Fernando A., Dupuis, Russell D.

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Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate von Li, Xiao-Hang, Kao, Tsung-Ting, Satter, Md. Mahbub, Wei, Yong O., Wang, Shuo, Xie, Hongen, Shen, Shyh-Chiang, Yoder, P. Douglas, Fischer, Alec M., Ponce, Fernando A., Detchprohm, Theeradetch, Dupuis, Russell D.

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Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays von Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay

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Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells von Li, Xiaohang, Xie, Hongen, Ponce, Fernando A., Ryou, Jae-Hyun, Detchprohm, Theeradetch, Dupuis, Russell D.

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Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating von Choi, Suk, Jin Kim, Hee, Lochner, Zachary, Kim, Jeomoh, Dupuis, Russell D., Fischer, Alec M., Juday, Reid, Huang, Yu, Li, Ti, Huang, Jingyi Y., Ponce, Fernando A., Ryou, Jae-Hyun

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Density-Controlled Growth of Aligned ZnO Nanowires Sharing a Common Contact:  A Simple, Low-Cost, and Mask-Free Technique for Large-Scale Applications von Wang, Xudong, Song, Jinhui, Summers, Christopher J, Ryou, Jae Hyun, Li, Peng, Dupuis, Russell D, Wang, Zhong L

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MOVPE grown periodic AlN/BAlN heterostructure with high boron content von Li, X., Sundaram, S., El Gmili, Y., Genty, F., Bouchoule, S., Patriache, G., Disseix, P., Réveret, F., Leymarie, J., Salvestrini, J.-P., Dupuis, R.D., Voss, P.L., Ougazzaden, A.

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Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition von Li, Xiao-Hang, Wang, Shuo, Xie, Hongen, Wei, Yong O., Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, Paul, Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition von Li, Xiao-Hang, Wei, Yong O., Wang, Shuo, Xie, Hongen, Kao, Tsung-Ting, Satter, Md. Mahbub, Shen, Shyh-Chiang, Douglas Yoder, P., Detchprohm, Theeradetch, Dupuis, Russell D., Fischer, Alec M., Ponce, Fernando A.

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Nick Holonyak Jr von Dupuis, Russell D., Feng, Milton

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BAlN thin layers for deep UV applications von Li, Xin, Sundaram, Suresh, Gmili, Youssef El, Moudakir, Tarik, Genty, Frédéric, Bouchoule, Sophie, Patriarche, Gilles, Dupuis, Russell D., Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah

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