Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs von Liu, Rui, Gao, Linchun, Wang, Juanjuan, Ni, Tao, Li, Yifan, Wang, Runjian, Li, Duoli, Bu, Jianhui, Zeng, Chuanbin, Li, Bo, Luo, Jiajun

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A probabilistic analysis technique for single event transient sensitivity evaluation of phase-lock-loops von Duoli, Li, Chuanbin, Zeng, Wei, Dou, Linchun, Gao, Weiwei, Yan, Bo, Li, Yang, Huang, Tao, Liu, Long, Xing, Hainan, Liu, Jiajun, Luo, Zhengsheng, Han

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Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique von Li, Yangyang, Li, Xiaojing, Li, Bo, Gao, Linchun, Yan, Weiwei, Wang, Fangfang, Li, Duoli, Zeng, Chuanbin, Luo, Jiajun, Han, Zhengsheng

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Analysis of Single Event Response and Hardening Methods in 1.2 kV SiC Power MOSFET With Multicell and Termination Structure von Lu, Jiang, Song, Wenjun, Liu, Tao, Tang, Jun, Zhao, Wen, Li, Duoli, Li, Bo

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TID Effect of MOSFETs in SOI BCD Process and its Hardening Technique von Wang, Shiping, Li, Xiaojing, Cai, Xiaowu, Li, Duoli, Jin, Meichen, Lu, Peng, Zhu, Huiping, Zeng, Chuanbin, Tang, Yun, Xia, Ruirui, Wang, Lei, Li, Bo

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Total Ionizing Dose Radiation Effects Hardening Using Back-Gate Bias in Double-SOI Structure von Huang, Yang, Han, Zhengsheng, Liu, Fanyu, Li, Bo, Li, Binhong, Gao, Jiantou, Zhang, Gang, Wang, Lei, Li, Duoli, Jiao, Jian, Zhao, Fazhan, Ye, Tianchun

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Comparison of Total Ionizing Dose Effects between Double and Conventional SOI Devices von Chen, Siyuan, Li, Jiangjiang, Liu, Fanyu, Li, Bo, Wang, Yuchong, Zhu, Huiping, Huang, Yang, Shu, Lei, Li, Duoli, Zhang, Gang, Wang, Fang, Zhang, Yinuo, Wang, Jiajia, Sun, Baogang, Sun, Yuxin, Lu, Weier, Zhang, Xinyi, Li, Binhong, Ye, Tianchun

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Automatic discrimination of sedimentary facies and lithologies in reef-bank reservoirs using borehole image logs von Chai, Hua, Li, Ning, Xiao, Chengwen, Liu, Xingli, Li, Duoli, Wang, Caizhi, Wu, Dacheng

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Single-event burnout of LDMOS with polygon P+ structure von Wang, Shiping, Cai, Xiaowu, Li, Xiaojing, Li, Duoli, Zeng, Chuanbin, Jin, Meichen, Wang, Jiajia, Li, Jiangjiang, Zhao, Fazhan, Li, Bo

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High-Temperature Stability Analysis of SOI-MOSFETs Characteristics Based on SPTI Model von Xu, Lida, Gao, Linchun, Ni, Tao, Wang, Juanjuan, Cao, Zewen, Li, Yifan, Li, Xueqin, Wang, Runjian, Li, Xiaojing, Yan, Weiwei, Bu, Jianhui, Li, Duoli, Zeng, Chuanbin, Li, Bo, Luo, Jiajun

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Investigation of Transient Two-Stage Thermal Equivalent RC Network of SOI-MOSFETs Using Nano Double-Pulse Measurement von Li, Yifan, Ni, Tao, Wang, Juanjuan, Gao, Linchun, Li, Xiaojing, Li, Jiangjiang, Bu, Jianhui, Li, Duoli, Xu, Lida, Wang, Runjian, Zeng, Chuanbin, Wang, Zhijie, Li, Bo, Zhao, Fazhan, Luo, Jiajun

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A Compact Model for Single-Event Transient in Fully Depleted Silicon on Insulator MOSFET Considering the Back-Gate Voltage Based on Time-Domain Components von Wang, Kewei, Zhang, Xinyi, Li, Bo, Li, Duoli, Zhao, Fazhan, Bu, Jianhui, Han, Zhengsheng

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A transient ionizing radiation SPICE model for PDSOI MOSFET von Gao, Libo, Du, Chuanhua, Bu, Jianhui, Li, Jiangjiang, Ma, Quangang, Zhao, Fazhan, Zeng, Chao, Gao, Jiantou, Li, Duoli, Zeng, Chuanbin, Han, Zhengsheng, Luo, Jiajun

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The ESD Characteristics of a pMOS-Triggered Bidirectional SCR in SOI BCD Technology von Li, Mingzhu, Cai, Xiaowu, Zeng, Chuanbin, Li, Xiaojing, Ni, Tao, Wang, Juanjuan, Li, Duoli, Zhao, Fazhan, Han, Zhengsheng

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Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions von Li, Yangyang, Zeng, Chuanbin, Li, Xiaojing, Gao, Linchun, Yan, Weiwei, Li, Duoli, Zhang, Yi, Han, Zhengsheng, Luo, Jiajun

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一种新型高抗辐照可配置SOI器件技术 von 叶甜春, 李博, 刘凡宇, 李多力, 李彬鸿, 陈思远

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Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOIMOSFET von Mei, Bo, Bi, Jinshun, Li, Duoli, Liu, Sinan, Han, Zhengsheng

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Influence of back-gate stress on the back-gate threshold voltage of a LOCOS-isolated SOI MOSFET von Mei, B, Bi, J, Li, D, Liu, S, Han, Z

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Model Parameters Extraction of SOI MOSFETs von Li Ruizhen, Li Duoli, Du Huan, Hai Chaohe, Han Zhengsheng

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Layout comparing schematic verifying method and device of discrete device von Han Zhengsheng, Gao Libo, Bu Jianhui, Li Duoli, Luo Jiajun

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