The electron-phonon relaxation time in thin superconducting titanium nitride films von Kardakova, A., Finkel, M., Morozov, D., Kovalyuk, V., An, P., Dunscombe, C., Tarkhov, M., Mauskopf, P., Klapwijk, T. M., Goltsman, G.

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A strained silicon cold electron bolometer using Schottky contacts von Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.

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Calculation of the characteristics of coplanar resonators for kinetic inductance detectors von Porch, A., Mauskopf, P., Doyle, S., Dunscombe, C.

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Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100) von Bennett, M.R., Dunscombe, C.J., Cafolla, A.A., Cairns, J.W., Macdonald, J.E., Williams, R.H.

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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers von Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parker, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., Mauskopf, P. D.

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Photoemission studies of the interactions of CdTe and Te with Si(100) von Bennett, M.R., Cafolla, A.A., Cairns, J.W., Dunscombe, C.J., Williams, R.H.

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A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100) von Burgess, S.R., Cowie, B.C.C., Wilks, S.P., Dunstan, P.R., Dunscombe, C.J., Williams, R.H.

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Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers von Brien, T L R, Ade, P A R, Barry, P S, Dunscombe, C J, Leadley, D R, Morozov, D V, Myronov, M, Parker, E H C, Prest, M J, Prunnila, M, Sudiwala, R V, Whall, T E, Mauskopf, P D

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Room temperature Terahertz hot electron bolometric detector based on AlGaAs/GaAs two dimensional electron gas von Fatimy, A E, Mauskopf, P D, Morozov, D, Dunscombe, C, Jones, T, Wood, K

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Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4 von Cheung, R, Thoms, S, Watt, M, Foad, M A, Sotomayor-Torres, C M, Wilkinson, C D W, Cox, U J, Cowley, R A, Dunscombe, C, Williams, R H

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Comparison of the (2 x 2) reconstructions of GaAs{111} surfaces von Thornton, JM, Weightman, P, Woolf, DA, Dunscombe, CJ

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A photoemission study of the (2 × 2) reconstructions of GaAs{111} surfaces von Thornton, J.M.C., Weightman, P., Woolf, D.A., Dunscombe, C.J.

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Water-gated organic nanowire transistors von Al Naim, A, Hobson, A, Grant, R.T, Dragoneas, A, Hampton, M, Dunscombe, C, Richardson, T, Macdonald, J.E, Grell, M

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The electron-phonon relaxation time in thin superconducting titanium nitride films von Kardakova, A, Finkel, M, Morozov, D, Kovalyuk, V, P An, Dunscombe, C, Tarkhov, M, Mauskopf, P, Klapwijk, T M, Goltsman, G

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KIDCAM - A passive THz imager von Wood, K., Doyle, S., Pascale, E., Rowe, S., Hargrave, P., Dunscombe, C., Grainger, W., Papageorgiou, A., Spencer, L., Mauskopf, P.

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Performance of cryogen-free THz detection and passive imaging systems von Wood, K., Doyle, S., Sudiwala, R., Pascale, E., Rowe, S., Hargrave, P., Jones, T., Dunscombe, C., Grainger, W., Papageorgiou, A., Spencer, L., Mauskopf, P., Tucker, C., Ade, P.

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A Strained Silicon Cold Electron Bolometer using Schottky Contacts von Brien, T L R, Ade, P A R, Barry, P S, Dunscombe, C, Leadley, D R, Morozov, D V, Myronov, M, Parker, E H C, Prunnila, M, Prest, M J, Sudiwala, R V, Whall, T E, Mauskopf, P D

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A Lumped Element Kinetic Inductance device for detection of THz radiation von Doyle, S., Mauskopf, P., Dunscombe, C., Porch, A., Naylon, J.

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Reactive ion etching induced damage in GaAs and Al 0.3 Ga 0.7 As using SiCl 4 von Cheung, R, Thoms, S, Watt, M, Foad, M A, Sotomayor-Torres, C M, Wilkinson, C D W, Cox, U J, Cowley, R A, Dunscombe, C, Williams, R H

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A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100) von BURGESS, S. R, COWIE, B. C. C, WILKS, S. P, DUNSTAN, P. R, DUNSCOMBE, C. J, WILLIAMS, R. H

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