Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays von Cai, Qing, You, Haifan, Guo, Hui, Wang, Jin, Liu, Bin, Xie, Zili, Chen, Dunjun, Lu, Hai, Zheng, Youdou, Zhang, Rong

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An improved design for e-mode AlGaN/GaN HEMT with gate stack β-Ga2O3/p-GaN structure von Ge, Mei, Li, Yi, Zhu, Youhua, Chen, Dunjun, Wang, Zhiliang, Tan, Shuxin

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Do all screw dislocations cause leakage in GaN-based devices? von Wang, Jin, You, Haifan, Guo, Hui, Xue, Junjun, Yang, Guofeng, Chen, Dunjun, Liu, Bin, Lu, Hai, Zhang, Rong, Zheng, Youdou

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Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter von Tan, Ruining, Cai, Qing, Wang, Jin, Pan, Danfeng, Li, Zheyang, Chen, Dunjun

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Insight into gain and transient response characteristics of AlGaN/GaN hetero-junction based UV photodetectors: Case study on the role of incident light intensity von Li, Wenxin, Wang, Yifu, Gu, Guangyang, Ren, Fangfang, Zhou, Dong, Xu, Weizong, Zhou, Feng, Chen, Dunjun, Zhang, Rong, Zheng, Youdou, Lu, Hai

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High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes von Zhou, Dong, Liu, Fei, Lu, Hai, Chen, Dunjun, Ren, Fangfang, Zhang, Rong, Zheng, Youdou

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High-performance AlGaN/GaN HEMTs with Hf0.5Zr0.5O2-based ferroelectric gate by pulsed laser deposition von Liu, Chuanqi, Zhu, Zimeng, Jiao, Peijie, Qiao, Guang, Hao, Lin, Guo, Hui, Pan, Danfeng, Wu, Di, Chen, Dunjun

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GaN microdisks with a single porous optical confinement layer for whispering gallery mode lasing von Li, Yuyin, Zhou, Jing, Yan, Ziwen, Zhang, Xianfei, Xie, Zili, Xiu, Xiangqian, Chen, Dunjun, Liu, Bin, Zhao, Hong, Shi, Yi, Zhang, Rong, Zheng, Youdou, Chen, Peng

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Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3 von Hao, Lin, Hu, Tiancheng, Guo, Hui, Pan, Danfeng, Ye, Jiandong, Zhou, Yugang, Lu, Hai, Zhang, Rong, Zheng, Youdou, Chen, Dunjun

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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias von Peng, Yanghu, Guo, Hui, Gong, Ruiling, Liu, Huaize, Shao, Pengfei, Sun, Na, Ren, Fangfang, Ye, Jiandong, Zheng, Youdou, Lu, Hai, Zhang, Rong, Chen, Dunjun

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Spin valve effect in CrN/GaN van der Waals heterostructures von Xue, Junjun, Chen, Wei, Tao, Tao, Zhi, Ting, Shao, Pengfei, Cai, Qing, Yang, Guofeng, Wang, Jin, Chen, Dunjun, Zhang, Rong

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High Sensitivity and Selectivity of AsP Sensor in Detecting SF6 Decomposition Gases von Jin, Wang, Guofeng, Yang, Junjun, Xue, Jianming, Lei, Qing, Cai, Dunjun, Chen, Hai, Lu, Rong, Zhang, Youdou, Zheng

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On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors von Yan, Dawei, Lu, Hai, Cao, Dongsheng, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy von Li, Siqi, Liang, Xiao, Shao, Pengfei, Chen, Songlin, Li, Zhenhua, Su, Xujun, Tao, Tao, Xie, Zili, Khan, M. Ajmal, Wang, Li, Lin, T. T., Hirayama, Hideki, Liu, Bin, Chen, Dunjun, Wang, Ke, Zhang, Rong

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RF performance enhancement in sub-μm scaled β-Ga2O3 tri-gate FinFETs von Yu, Xinxin, Gong, Hehe, Zhou, Jianjun, Shen, Zhenghao, Ren, Fang-fang, Chen, Dunjun, Ou, Xin, Kong, Yuechan, Li, Zhonghui, Chen, Tangsheng, Gu, Shulin, Zhang, Rong, Zheng, Youdou, Ye, Jiandong

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Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure von Cao, Jiying, Cai, Qing, You, Haifan, Shao, Pengfei, Wang, Jin, Guo, Hui, Xue, Junjun, Liu, Bin, Xie, Zili, Cao, Xun, Lu, Hai, Zheng, Youdou, Zhang, Rong, Chen, Dunjun

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High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures von Shao, Pengfei, Fan, Xing, Li, Siqi, Chen, Songlin, Zhou, Hui, Liu, Huan, Guo, Hui, Xu, Weizong, Tao, Tao, Xie, Zili, Lu, Hong, Wang, Ke, Liu, Bin, Chen, Dunjun, Zheng, Youdou, Zhang, Rong

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Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer von Huang, Xiaoming, Wu, Chenfei, Lu, Hai, Ren, Fangfang, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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Forward tunneling current in GaN-based blue light-emitting diodes von Yan, Dawei, Lu, Hai, Chen, Dunjun, Zhang, Rong, Zheng, Youdou

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Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors von Dai, Jiangping, Gao, Wang, Liu, Bin, Cao, Xianlei, Tao, Tao, Xie, Zili, Zhao, Hong, Chen, Dunjun, Ping, Han, Zhang, Rong

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