A universal scaling of planar fault energy barriers in face-centered cubic metals von Jin, Z.H., Dunham, S.T., Gleiter, H., Hahn, H., Gumbsch, P.

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Theoretical Studies of Self-Diffusion and Dopant Clustering in Semiconductors von Uberuaga, B.P., Henkelman, G., Jónsson, H., Dunham, S.T., Windl, W., Stumpf, R.

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First-Principles Study of Boron Diffusion in Silicon von Windl, W., Bunea, M. M., Stumpf, R., Dunham, S. T., Masquelier, M. P.

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Analysis of a Compact Modulator Incorporating a Hybrid Silicon/Electro-Optic Polymer Waveguide von McLauchlan, K.K., Dunham, S.T.

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Band bending and surface defects in β -Ga2O3 von Lovejoy, T. C., Chen, Renyu, Zheng, X., Villora, E. G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A.

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Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation von Kohli, P., Jain, A., Chakravarthi, S., Bu, H., Dunham, S. T., Banerjee, S.

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Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3 von Lovejoy, T. C., Chen, Renyu, Yitamben, E. N., Shutthanadan, V., Heald, S. M., Villora, E. G., Shimamura, K., Zheng, S., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A.

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Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation von Kohli, P., Chakravarthi, S., Jain, Amitabh, Bu, H., Mehrotra, M., Dunham, S.T., Banerjee, S.K.

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Interactions of silicon point defects with SiO2 films von DUNHAM, S. T

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Modeling of the kinetics of dopant precipitation in silicon von DUNHAM, S. T

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A quantitative model for the coupled diffusion of phosphorus and point defects in silicon von DUNHAM, S. T

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A viscous compressible model for stress generation/relaxation in SiO2 von NAVI, M, DUNHAM, S. T

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Investigation of boron penetration through thin gate dielectrics including role of nitrogen and fluorine von NAVI, M, DUNHAM, S. T

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(Invited) Modeling of Oxygen Precipitation in Silicon von Dunham, Scott T., Trzynadlowski, Bart C.

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Growth kinetics of disk-shaped extended defects with constant thickness von DUNHAM, S. T

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Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation von Kohli, P., Jain, Amitabh, Bu, H., Chakravarthi, S., Machala, C., Dunham, S. T., Banerjee, S. K.

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Transition metal defect behavior and Si density of states in the processing temperature regime von Smith, A.L, Dunham, S.T, Kimerling, L.C

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Functional unknomics: Systematic screening of conserved genes of unknown function von Rocha, João J, Jayaram, Satish Arcot, Stevens, Tim J, Muschalik, Nadine, Shah, Rajen D, Emran, Sahar, Robles, Cristina, Freeman, Matthew, Munro, Sean

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Band bending and surface defects in β -Ga 2 O 3 von Lovejoy, T. C., Chen, Renyu, Zheng, X., Villora, E. G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A.

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Charge carrier induced lattice strain and stress effects on As activation in Si von Ahn, C, Dunham, S T

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