Optimal quantum teleportation fidelity in arbitrary dimension von Gong, Neng-Fei, Cai, Dun-Bo, Huang, Zhi-Guo, Qian, Ling, Zhang, Run-Qing, Hu, Xiao-Min, Liu, Bi-Heng, Wang, Tie-Jun

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Estimate Volumes of Convex Polytopes: A New Method Based on Particle Swarm Optimization von Xu, Sheng, Cai, Dun Bo

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CDOFF: Fast-Forward Planning for Creating or Destroying Objects von Wen-Xiang Gu, Ming-Si Sun, Dun-Bo Cai

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Empirical Evidence of Hurst Exponent Estimation Wavelet Based von Cai, Dun Bo, Zhao, Tong Zhou, Luo, Bin, Li, De Hua

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Most required goals for extracting heuristics in planning von Dun-Bo Cai, Wen-Xinag Gu

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Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition von Liu, Bo, Zhang, Sen, Yin, Jia-Yun, Zhang, Xiong-Wen, Dun, Shao-Bo, Feng, Zhi-Hong, Cai, Shu-Jun

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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes von Lü, Yuan-Jie, Feng, Zhi-Hong, Lin, Zhao-Jun, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Han, Ting-Ting, Cai, Shu-Jun

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Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode von 吕元杰 冯志红 顾国栋 敦少博 尹甲运 韩婷婷 盛百城 蔡树军 刘波 林兆军

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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes von Lü, Yuan-Jie, Feng, Zhi-Hong, Gu, Guo-Dong, Dun, Shao-Bo, Yin, Jia-Yun, Wang, Yuan-Gang, Xu, Peng, Han, Ting-Ting, Song, Xu-Bo, Cai, Shu-Jun, Luan, Chong-Biao, Lin, Zhao-Jun

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Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors von Lü, Yuan-Jie, Feng, Zhi-Hong, Cai, Shu-Jun, Dun, Shao-Bo, Liu, Bo, Yin, Jia-Yun, Zhang, Xiong-Wen, Fang, Yu-Long, Lin, Zhao-Jun, Meng, Ling-Guo, Luan, Chong-Biao

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Modified model of gate leakage currents in AlGaN/GaN HEMTs von 王元刚 冯志红 吕元杰 谭鑫 敦少博 房玉龙 蔡树军

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Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates von 李佳 王丽 冯志红 蔚翠 刘庆彬 敦少博 蔡树军

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Modified model of gate leakage currents in AlGaN/GaN HEMTs Project supported by the National Natural Science Foundation of China (Grant No. 61306113) von Wang, Yuan-Gang, Feng, Zhi-Hong, Lv, Yuan-Jie, Tan, Xin, Dun, Shao-Bo, Fang, Yu-Long, Cai, Shu-Jun

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使用前沿技术激发人工智能课程的学习兴趣 von 蔡敦波 赵彤洲

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兵营浪漫曲 von 皮埃尔·伯顿, 蔡德敏

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腹腔镜下全直肠系膜切除术联合新辅助治疗在中低位直肠癌中的近期效果观察 von 黄冀华 梁伟成 李华江 蔡锐文 梁华艳 黄开劲 梁敦波

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